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5-18ghz Datasheet PDF File

For 5-18ghz Found Datasheets File :: 385 Search Time::2.968ms
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				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors] http://
Part No.	CHX2089 CHX2089-99F_00 CHX2089-99F/00
OCR Text	...8 16 Typ 9 18 12 Max 11.5 23 15 Unit GHz GHz dBm dBm 11 15 ESD Protection : Electrostatic discharge sensitive device. O...18GHz Frequency Multiplier Tamb = +25C, Vd = 3.5V , Vg1 = -0.9V , Vg2 adjusted for Id=50 mA (Vg2 ...
Description	Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:22; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight 9 - 18GHz频率倍频 9-18GHz Frequency Multiplier
File Size	76.25K / 4 Page	View it Online	Download Datasheet

				United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
Part No.	CHA2291-99F_00 CHA2291 CHA2291-99F/00
OCR Text	...Bm 23 1 60 2.2 20 10 3.0:1 2.5:1 5 [-0.7, +1.2] 25 180 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias curre...18GHz LNA VGA Typical on wafer Measurements 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 Gain (dB) ...
Description	10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声，可变增益放大
File Size	134.80K / 6 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	CHA2292-99F_00 CHA2292 CHA2292-99F/00
OCR Text	...Bm 25 1 50 2.8 15 11 3.0:1 2.5:1 5 [-0.7, +1.2] 35 160 -1.5 +1.3 V V mA mA Id1 Id Bias current (2) with Vc=1.2V Bias curre...18GHz 20GHz -30 -25 -20 Input power (dBm) -15 -10 Gain & Output power @ 18-20 GHz ...
Description	KJA 79C 79#22D PIN PLUG 17-24GHz Low Noise, Variable Gain Amplifier
File Size	135.23K / 6 Page	View it Online	Download Datasheet

				UMS[United Monolithic Semiconductors]
Part No.	CHA5293A-99F_00 CHA5293A CHA5293A-99F/00
OCR Text	...3 Vd3 Vg1,2 Vd2 25 20 15 10 5 0 -5 -10 -15 -20 12 14 16 18 20 Vg3 Vd3 Main Features Performances : 17-24GHz 30dBm output power ...18GHz F=10MHz C/ I3 (dBc) IP3 (dBm) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Outpu...
Description	17-24GHz High Power Amplifier
File Size	147.96K / 7 Page	View it Online	Download Datasheet

				MIMIX[Mimix Broadband]
Part No.	CMM0618-BD
OCR Text	...tionally stable 6.0 28.0 29.0 8.5 700 29.0 30.0 36.0 775 MAX 18.0 2.0 12.5 3.0 850 tbd UNITS GHz dBm dBm dBm dB dB dBm mA C/W (1) These specifications are subject to change. (2) Based on raw data taken using Celeritek' s connecto...
Description	5.0 to 18.0 GHz 1w MMIC Amplifier
File Size	219.19K / 3 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Excelics Semiconductor
Part No.	EFA018A-70
OCR Text	...ds=3V, Ids=1.0 mA -10 -6 MIN 16.5 9.0 All Dimensions In mils. TYP 18.5 18.5 10.5 8.0 33 1.1 10.5 MAX UNIT dBm dB % dB dB 25 20 50 30 -2.0 -15 -14 480* 80 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=0.5mA...
Description	Low Distortion GaAs Power FET
File Size	19.06K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Excelics Semiconductor
Part No.	EFA025A-70
OCR Text	...ends on case mounting. MIN 17 8.5 TYP 20 20 10 7 35 1.5 10 65 40 -2 -15 -14 370* MAX UNIT dBm dB % dB dB mA mS V V V o C/W 35 30 -10 -6 All Dimensions In mils. 105 -3.5 MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CO...
Description	Low Distortion GaAs Power FET
File Size	31.33K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFA025AL
OCR Text	...Vds=3V, Ids=1.0mA -12 -7 17.0 9.5 Chip Thickness: 75 13 microns All Dimensions In Microns MIN TYP 20.0 20.0 11.5 9.0 38 MAX UNIT dBm dB % 20 30 45 50 -1.5 -15 -14 155 65 mA mS -2.5 V V V o Drain Breakdo...
Description	High Gain GaAs Power FET 高增益GaAs功率场效应管
File Size	20.54K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Excelics Semiconductor, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFA040A-70
OCR Text	...=18GHz f=12GHz 60 45 MIN 20.0 6.5 TYP 22.0 22.0 8.0 5.0 33 105 60 -2.0 -10 -6 -15 -14 250* o MAX UNIT dBm dB % Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0 mA 160 mA mS -3.5 V V V C/W Drain Breakdown Voltage Igd=1....
Description	Low Distortion GaAs Power FET 低失真GaAs功率场效应管
File Size	18.75K / 2 Page	View it Online	Download Datasheet

				Excelics Semiconductor, Inc. ETC[ETC] List of Unclassifed Manufacturers
Part No.	EFA060B-70
OCR Text	...+24.0dBm TYPICAL OUTPUT POWER 7.5 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAX...18GHz Gain at 1dB Compression f=12GHz Vds=6V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Com...
Description	Low Distortion GaAs Power FET From old datasheet system
File Size	18.75K / 2 Page	View it Online	Download Datasheet

For 5-18ghz Found Datasheets File :: 385 Search Time::2.968ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |