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SIEMENS AG
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| Part No. |
SKW30N60
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| OCR Text |
...g energy e ts t j =25 c, v cc =400v, i c =30a, v ge =0/15v, r g =11 ? , energy losses include ?tail? and diode reverse recovery. - 1.29 1.6...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of ga... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
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| File Size |
272.38K /
13 Page |
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International Rectifier
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| Part No. |
IRAM136-3063B11 IRAM136-3063B2 IRAM136-3063B-15
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| OCR Text |
...: sinusoidal modulation at v + =400v, t j =150c, f pwm =6khz, modulation depth=0.8, pf=0.6, see figure 3. note 2: t p <100ms; t c =25c; f pw...600v --- 80 --- v in =5v, v + =600v, t j =125c --- 1.6 2.5 i c =15a --- 1.5 2.2 i c =15a, t j =125c ... |
| Description |
Integrated Power Hybrid IC for High Voltage Motor Applications
AC MOTOR CONTROLLER, 30 A, SFM18
Temperature Monitor and Protection
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| File Size |
224.30K /
17 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK42S60
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| OCR Text |
...9 w q g,typ 40nc e oss @ 400v 9.2 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j ,...600v, v gs =0v v ds =5v,i d =250 m a v ds =480v, t j =150c zero gate voltage drain current body diod... |
| Description |
600V 39A a MOS TM Power Transistor
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| File Size |
491.71K /
6 Page |
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it Online |
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International Rectifier
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| Part No. |
IRGIB15B60KD1P IRGIB15B60KD1P-15
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| OCR Text |
...C
Conditions
IC = 15A VCC = 400V VGE = 15V IC = 15A, VCC = 400V VGE = 15V, RG = 22, L = 1.07mH Ls= 150nH, TJ = 25C IC = 15A, VCC = 400V ...600V VCC=500V,VGE = +15V to 0V,RG = 22 TJ = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V to 0V TJ = ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
376.30K /
13 Page |
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it Online |
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Fairchild Semiconductor
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| Part No. |
FGI40N60SF FGI40N60SFTU
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| OCR Text |
... Gate to Collector Charge VCE = 400V, IC = 40A, VGE = 15V VCC = 400V, IC = 40A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC VCC = 400V, I...600V, 40A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Character... |
| Description |
600V, 40A Field Stop IGBT
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| File Size |
716.12K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IKW50N60H3
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| OCR Text |
...d time v ge =15.0v, v cc 400v allowed number of short circuits < 1000 time between short circuits: 3 1.0s t vj =150c t sc 5 s pow...600v, v ge =0v t vj =25c t vj =175c - - - - 40.0 3500.0 a gate-emitter leakage current i ges ... |
| Description |
High speed switching series third generation
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| File Size |
2,128.80K /
16 Page |
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it Online |
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Price and Availability
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