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MAXIM - Dallas Semiconductor MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
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| Part No. |
MAX9310A MAX9310AEUP MAX9310AEUP-T MAX9310AEUPT
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| OCR Text |
...on Circuit
Q0 1 QO 2 Q1 3 Q1 4
20 VCC 19 EN 18 VCC 17 CLK1
MAX9310A
ZO = 50 Q_
RECEIVER
Q2 5 Q2 6 Q3 7
MAX9310A
16 CLK...45 75 48 75 51 75 mA VBB IBB = 0.65mA (Note 4) VCC 1.38 VCC 1.22 VCC 1.38 VCC 1.26 VCC 1.40 VCC 1.26... |
| Description |
1:5 Clock Driver with Selectable LVPECL Inputs/Single-Ended Inputs and LVDS Outputs LOW SKEW CLOCK DRIVER, 5 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
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| File Size |
173.36K /
11 Page |
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MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
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| Part No. |
MAX9310 MAX9310EUPT
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| OCR Text |
...on Circuit
Q0 1 QO 2 Q1 3 Q1 4
20 VCC 19 EN 18 VCC 17 CLK1
MAX9310
ZO = 50 Q_
RECEIVER
Q2 5 Q2 6 Q3 7
MAX9310
16 CLK1 ...45.5 75 48.5 75 mA SYMBOL CONDITIONS -40C MIN TYP MAX MIN +25C TYP MAX MIN +85C TYP MAX UNITS
MAX... |
| Description |
1:5 Clock Driver with Selectable LVPECL Inputs and LVDS Outputs LOW SKEW CLOCK DRIVER, 5 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO20
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| File Size |
170.99K /
9 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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| Part No. |
EGN21A045I EGN21A045IV
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| OCR Text |
...35GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = 8.5dB@0.01% Probability(CCDF)) measured over 3.84MHz ...45 -50 24 26 28 30 32 34 36 38 40 42 44 Output Power(average) [dBm] 125mA 250mA 375mA 500mA
r P
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| Description |
High Voltage - High Power GaN-HEMT
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| File Size |
226.74K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0911A_1 MGF0911A MGF0911A1
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| OCR Text |
...Hz
2 3
2-R1.25
14.3
9.4
APPLICATION
UHF band power amplifiers
QUALITY GRADE
* IG
10.0
RECOMMENDED BIAS CONDITIONS
* V...45 VDS=10V ID=2.6A Gp=11 10 9 dB 13 12 11 PO 10 41 35 39 30 add 25 0 20 25 30 35 50 40 30 20 10 0 37... |
| Description |
L, S BAND POWER GaAs FET
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| File Size |
28.87K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
MGF0911A 0911A
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| OCR Text |
...Hz
2 3
2-R1.25
14.3
9.4
APPLICATION
UHF band power amplifiers
QUALITY GRADE
* IG
10.0
RECOMMENDED BIAS CONDITIONS
* V...45 VDS=10V ID=2.6A Gp=11 10 9 dB 13 12 11 PO 10 41 35 39 30 add 25 0 20 25 30 35 50 40 30 20 10 0 37... |
| Description |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
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| File Size |
21.84K /
3 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
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| OCR Text |
...es high reliability.
176.+0'&4#9+0)
/+0
/+0
7PKVOKNNKOGVGTU
KPEJGU
r
r
FEATURES
Class A operation Internally matched to 50(oh...45 % (TYP.) @ f=1.9 - 2.0GHz Low distortion [item -51] IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
r ... |
| Description |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.84K /
3 Page |
View
it Online |
Download Datasheet
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Price and Availability
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