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  4.3mh Datasheet PDF File

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    IRF530NS IRF530NSTRRPBF

International Rectifier
Part No. IRF530NS IRF530NSTRRPBF
OCR Text ...commodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mo...3mh r g = 25 ? , i as = 9.0a, v gs =10v (see figure 12) i sd 9.0a di/d 410a/s,...
Description Advanced Process Technology

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    Advanced Interconnections, Corp.
Part No. EMA-3MHTR
OCR Text ... typical maximum 0.05 - 100 mhz 4.8 7.0 0.025 - 200 mhz 5.5 8.5 isolation (db) typical minimum lo to rf 0.025 - 0.25 mhz 74 50 0.25 - 100 mh...3mh tube ema-3mhtr forward tape & reel r-1 pin con?uration function pin no. lo 8 rf 1 if* 3,4 ground...
Description Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP
Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40&deg;C to 85&deg;C; Package: 8-MSOP E系列插件混合.025200兆赫

File Size 42.20K  /  1 Page

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    DMP2038USS-15

Diodes Incorporated
Part No. DMP2038USS-15
OCR Text ...= +25c -20v 38m ? @ v gs = -4.5v -6.5a 56m ? @ v gs = -2.5v -5.0a description and applications this mosfet has been des...3mh i as 13.2 a avalanche energy (note 7) l=0.3mh e as 26 mj thermal characteristics ...
Description 20V P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 279.21K  /  6 Page

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    TSM190N08 TSM190N08CZC0

Taiwan Semiconductor Company, Ltd
Part No. TSM190N08 TSM190N08CZC0
OCR Text ... 1/4 version: a12 to - 220 p...3mh i as , i ar 113 a avalanche energy, l=0.3mh e as , e ar 1900 mj maximum power diss...
Description 75V N-Channel Power MOSFET

File Size 57.13K  /  4 Page

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    PLY10AS2321R2D2B PLY10AS1130R5D2B S2821R2R2M PLY10AS9012R0R2M

Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
Part No. PLY10AS2321R2D2B PLY10AS1130R5D2B S2821R2R2M PLY10AS9012R0R2M
OCR Text ...uipment for your design. 2007.7.4 noise suppression products/emi suppression filters > ac line filters > hybrid choke coils 17.5 max. 18 ma...3mh 300 h 1.0a 300vac ply10as6220r8r2 p 6.2mh 400 h 0.8a 300vac ply10as8720r7r2 p 8.7mh 530 h 0.7...
Description 300 V, SINGLE PHASE EMI FILTER

File Size 69.67K  /  3 Page

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    Mitsumi Electronics
Part No. C13-FR1
OCR Text ...x. ?.7 14 max. ?1 max. 17 max. ?4 max. operational type inductance rated current dc resistance frequency pcs/reel (a) ( ? ) (khz) c8-fr1 series 2.2h~3.3mh 0.14~5.00 (l=2.2h) 0.018~11.0 (l=3.3mh) 10~500 1000 c10-fr1 series 3.3h~150mh 0.048...
Description Power Inductors

File Size 100.58K  /  6 Page

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    Silikron Semiconductor ...
Part No. SSF7508A
OCR Text ... gate threshold voltage 2 ? 4 v v ds = vgs, i d = 250 a ? 2.4 ? t j = 125 i dss drain-to-source leakage current ? ? 1 a v ds = 75v,v gs = 0v ? ? 50 t j = 125c i gss gate-to-source forward leakage ? ...
Description Advanced MOSFET process technology

File Size 386.87K  /  8 Page

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    Directed Energy
Part No. DTS-1600A
OCR Text ...00v ? pulse width from 1 s to 4.75ms ? pulse frequency from 200hz to 20khz ? oven temperature from ambient to 180 c ? enable/disable t...3mh at 3.5 s pulse width, 1600v unipolar, 20khz oven specifications min. temperature ambien...
Description Dielectric Test System

File Size 80.90K  /  4 Page

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    SSS1206

GOOD-ARK Electronics
Part No. SSS1206
OCR Text ...r jc junction-to-case 0.4 c/w junction-to-ambient (t 10s) 62 c/w r ja junction-to-ambient (pcb mounted, steady-state) 40 c/w electrical characteristics @t a =25 unless otherwise specified symbol para...
Description 120V N-Channel MOSFET

File Size 1,108.70K  /  7 Page

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    SSS1510

GOOD-ARK Electronics
Part No. SSS1510
OCR Text ...m v gs =8v,i d =50a 2.0 4.0 v ds = v gs , i d =250a v gs(th) gate threshold voltage 2.3 v t j = 125c 1 v ds =120v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 10...
Description 150V N-Channel MOSFET

File Size 1,167.88K  /  7 Page

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