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  30v- Datasheet PDF File

For 30v- Found Datasheets File :: 33906    Search Time::1.203ms    
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    AP9579GM-HF AP9579GM-HF14

Advanced Power Electronics Corp.
Part No. AP9579GM-HF AP9579GM-HF14
OCR Text ... q gs gate-source charge v ds =-30v - 8 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 18 - nc t d(on) turn-on delay time v ds =-30v - 12 - ns t r rise time i d =-1a - 9 - ns t d(off) turn-off delay time r g =3.3 -77- ns t f fall tim...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 56.22K  /  4 Page

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    PMDPB70EN

NXP Semiconductors
Part No. PMDPB70EN
OCR Text ...drain-source voltage t j =25c --30v v gs gate-source voltage -20 - 20 v i d drain current v gs =10v; t amb = 25 c; t 5 s [1] --4.5a static characteristics (per transistor) r dson drain-source on-state resistance v gs =10v; i d =3.5a; t ...
Description MOSFET

File Size 309.80K  /  15 Page

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    MTC6322KS6R

Cystech Electonics Corp.
Part No. MTC6322KS6R
OCR Text ...r1 tr2 n-ch p-ch bv dss 30v -30v i d 0.45a -0.45a r dson (typ.) @v gs =(-)4.5v 0.86 0.98 r dson (typ.) @v gs =(-)2.7v 1.2 1.44 cystech electronics corp. spec. no. : c829s6r issued date : 2012.08.10 revised ...
Description P-Channel Logic Level Enhancement Mode MOSFET

File Size 299.92K  /  12 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ..., VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-S...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    Taiwan Semiconductor Co., Ltd.
TSC[Taiwan Semiconductor Company, Ltd]
Part No. TS79L24CY TS79L00 TS79L05 TS79L05CS TS79L05CT TS79L05CY TS79L06 TS79L06CS TS79L06CT TS79L06CY TS79L08 TS79L08CS TS79L08CT TS79L08CY TS79L09 TS79L09CS TS79L09CT TS79L09CY TS79L12 TS79L12CS TS79L12CT TS79L12CY TS79L15 TS79L15CS TS79L15CT TS79L15CY TS79L18 TS79L18CS TS79L18CT TS79L18CY TS79L24 TS79L24CS TS79L24CT
OCR Text ... Conditions Tj=25 C -17.5VVin -30V, 5mAIout100mA Min - 14.42 - 14.28 Typ - 15 - 15 Max - 15.60 - 15.75 Unit V Vout Line Regulation REGline Tj=25 oC Tj=25 oC o -17.5VVin -30V, Io=40mA 5mAIout100mA 5mAIout40mA...
Description 3-Terminal Low Current Negative Voltage Regulator 三端低电流负电压稳压
Connector assemblies, Test 三端低电流负电压稳压
20-Bit Flow-through Bus Switch (2 Enables) w/25 Ohm resistor

File Size 136.88K  /  8 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPP7401S32RG SPP7401
OCR Text ...D Display inverter FEATURES -30V/-2.8A,RDS(ON)=115m@VGS=- 10V -30V/-2.5A,RDS(ON)=125m@VGS=-4.5V -30V/-1.5A,RDS(ON)=170m@VGS=-2.5V -30V/-1.0A,RDS(ON)=240m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-...
Description P-Channel Enhancement Mode MOSFET

File Size 197.11K  /  8 Page

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    SPP6507S26RG SPP6507

Murata Manufacturing Co., Ltd.
SYNC-POWER[SYNC POWER Crop.]
Part No. SPP6507S26RG SPP6507
OCR Text ...inverter FEATURES P-Channel -30V/-2.8A,RDS(ON)=105m@VGS=- 10V -30V/-2.5A,RDS(ON)=115m@VGS=-4.5V -30V/-1.5A,RDS(ON)=150m@VGS=-2.5V -30V/-1.0A,RDS(ON)=215m@VGS=-1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-...
Description Dual P-Channel Enhancement Mode MOSFET 双P沟道增强型MOS

File Size 197.81K  /  8 Page

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    Amphenol, Corp.
SYNC-POWER[SYNC POWER Crop.]
Part No. SPP4953S8TG SPP4953 SPP4953S8RG
OCR Text ...high-side switching . FEATURES -30V/-5.0A,RDS(ON)= 60m@VGS=- 10V -30V/-4.5A,RDS(ON)= 80m@VGS=- 6V -30V/-3.7A,RDS(ON)= 90m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current c...
Description P-Channel Enhancement Mode MOSFET P沟道增强型MOS

File Size 213.45K  /  8 Page

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    SPP3401S23RG SPP3401

SYNC-POWER[SYNC POWER Crop.]
Part No. SPP3401S23RG SPP3401
OCR Text ...urface mount package. FEATURES -30V/-4.0A,RDS(ON)= 55m@VGS=- 10V -30V/-3.2A,RDS(ON)= 65m@VGS=-4.5V -30V/-1.2A,RDS(ON)= 75m@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current ...
Description P-Channel Enhancement Mode MOSFET

File Size 195.27K  /  8 Page

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    SYNC-POWER[SYNC POWER Crop.]
Part No. SPP2303S23RG SPP2303
OCR Text ...urface mount package. FEATURES -30V/-2.6A,RDS(ON)=130m@VGS=- 10V -30V/-2.0A,RDS(ON)=180m@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package desig...
Description P-Channel Enhancement Mode MOSFET

File Size 197.27K  /  8 Page

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