300us pdf Datasheet P6 Full Text Search --- IC-ON-LINE

300us Datasheet PDF File

For 300us Found Datasheets File :: 7069 Search Time::2.39ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Silicon Standard Corp.
Part No.	SSM1333GU
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on fr4 board, t < 10 sec. high-side line and general load-switching circuits. the ssm1333gu is supplied in an rohs-compliant sot-323/sc-70 package, which is widely used for lo...
Description	P-channel Enhancement-mode Power MOSFET
File Size	512.99K / 5 Page	View it Online	Download Datasheet

				Rohm
Part No.	DAN21711
OCR Text	...8.3ms t ifsm 1ms im=1ma if=10ma 300us time ?????????g?r 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 1ms im=100ma if=10a 300us time mounted on epoxy board 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data s...
Description	Switching Diode
File Size	1,004.09K / 3 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	SUM202MN
OCR Text	... 6. pulse test : pulse width 300us, duty cycle 2%. 7. guaranteed by design, not subject to production testing. sum202mn ksd-t6t001-001 4 electrical characteristics for pnp transistor (...
Description	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
File Size	373.88K / 9 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM7811GM
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on a square inch of copper pad on fr4 board ; 125c/w when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. the ssm7811gm...
Description	N-channel Enhancement-mode Power MOSFET
File Size	568.11K / 7 Page	View it Online	Download Datasheet

				SeCoS Halbleitertechnologie GmbH
Part No.	SSF7400
OCR Text	...temperature. 2. pulse width Q 300us, duty cycle Q 2%. 3. surface mounted on fr4 board, t Q 10sec. sot-323 top view a l c b d g h j f k e 1 2 3 1 2 3 millimete r millimete r ref. min. max. ref. min. max. a 1.80 2.20 g ...
Description	30V , 1.7A , RDS(ON) 85mΩ N-Ch Enhancement Mode Power MOSFET
File Size	426.39K / 4 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K5P6480YCM-T085
OCR Text	...an be typically achieved within 300us and an 8k-byte block erase can be typically achieved within 2ms. in serial read operation, a byte can be read by 50ns. the i/o pins serve as the ports for address and data input/output as well as comman...
Description	64M Bit (8Mx8) Nand Flash Memory / Data Sheet
File Size	549.73K / 29 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K5Q6432YCM-T010
OCR Text	...an be typically achieved within 300us and an 8k-byte block erase can be typically achieved within 2ms. in serial read operation, a byte can be read by 50ns. the dq pins serve as the ports for address and data input/output as well as command...
Description	64M Bit Voltage Full CMOS Static RAM Data Sheet
File Size	617.62K / 32 Page	View it Online	Download Datasheet

				Silicon Standard Corp.
Part No.	SSM2310GN
OCR Text	...erature of 150c. 2.pulse width <300us, duty cycle <2%. 3.mounted on a square inch of copper pad on fr4 board ; 270c/w when mounted on the minimum pad area required for soldering. converters and general load-switching circuits. the ssm2310gn...
Description	N-channel Enhancement-mode Power MOSFET
File Size	477.96K / 5 Page	View it Online	Download Datasheet

				Zowie Technology Corporation
Part No.	SB320H SB360H SB3100H
OCR Text	... 20 10 notes : (1) pulse test 300us pulse widh, 1% duty cycle (2) thermal resistance from junction to lead vertical p.c.b. mounting 0.50" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm) copper pad 1.0(25.4) min. 1.0(25.4) min. 0.21...
Description	SCHOTTKY BARRIER RECTIFIER
File Size	39.93K / 2 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
Part No.	MAGX-001220-1SB1PPR MAGX-001220-100L00 MAGX-001220-100L00-15
OCR Text	... i dq = 100ma, pout = 100w 300us pulse / 10% duty 0.84 oc/w operating temp - 40 to +95c storage temp - 65 to +150c esd min. - machine model (mm) 50 v esd min. - human body model (hbm) >250 v msl level msl1 ...
Description	GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz
File Size	801.96K / 6 Page	View it Online	Download Datasheet

For 300us Found Datasheets File :: 7069 Search Time::2.39ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |