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STBN030 S268P 24B250 RLA910 620AS042 1CZ22V 301AN AO9926
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  256m-word Datasheet PDF File

For 256m-word Found Datasheets File :: 222    Search Time::1.047ms    
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    Mitsubishi Electric Corporation
Part No. M2V56S20AKT-6 M2V56S20AKT-5
OCR Text ...s:single data rate density 56: 256m bits interface v:lvttl memory style (dram) m 2 v 56 s 4 0 a kt - 5 block diagram /...word by word. dqmu/l to data in latency is 0. during reads, dqmu/l forces output to hi-z word by wo...
Description 256M Synchronous DRAM

File Size 685.62K  /  49 Page

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    K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-

SAMSUNG[Samsung semiconductor]
Part No. K9F5608UOC K9F56XXQ0C K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616U0C-Y
OCR Text ...or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides ...word(X16 device) page and an erase operation can be performed in typical 2ms on a 16K-byte(X8 device...
Description 32M x 8 Bit 16M x 16 Bit NAND Flash Memory

File Size 668.51K  /  41 Page

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    MXIC
MCNIX[Macronix International]
Part No. MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 MX23L25611MC-10
OCR Text ...Page Size - 8 words per page 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY) * Current - Operating: 30mA (max.) @ 5MHz...Word Mode) / LSB Address (Byte Mode) Chip Enable Input Output Enable Input Word/Byte Mode Selection ...
Description 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)

File Size 177.03K  /  7 Page

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For 256m-word Found Datasheets File :: 222    Search Time::1.047ms    
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