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02004 6711MMQ PUMA6 3EK7M M32F3 M200V35X SWF3N80A 7324A
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    APT8014JFLL

Advanced Power Technology
Part No. APT8014JFLL
OCR Text ...UNIT Volts Amps 800 42 0.140 250 1000 100 3 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS...440 1100 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.0 13 15 30 Tj = 1...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8014L2FLL

ADPOW[Advanced Power Technology]
Part No. APT8014L2FLL
OCR Text ...UNIT Volts Amps 800 52 0.140 250 1000 100 3 5 (VDS > ID(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS ...440 1100 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.0 13 15...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...Volts Amps 800 11.5 0.650 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10...440) 25.15 (0.990) 26.67 (1.050) 050-5823 Rev A Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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    EL2099C EL2099CT

ELANTEC[Elantec Semiconductor]
Part No. EL2099C EL2099CT
OCR Text ... typical Offset Voltage of only 250 mV at T e 25 C and a maximum of 1 25 mV over temperature variations g18V and decrease slightly as suppl...440 mA of output drive and low output impedance driving six 75X double terminated coaxial cables to ...
Description Video Distribution Amplifier

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    EPM3512A

Altera Corporation
Part No. EPM3512A
OCR Text ...242 243 244 245 246 247 248 249 250 251 252 253 254 255 256 257 258 259 260 261 262 263 264 265 208-Pin PQFP 96 97 98 99 100 88 89 90 91 92 ...440 441 442 443 444 445 446 447 448 449 450 451 452 453 454 455 456 457 458 459 460 461 462 463 464 ...
Description EPM3512A Dedicated Pin-Outs
EPM3512A Dedicated Pin-Outs

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    MA4SPS302

MACOM[Tyco Electronics]
Part No. MA4SPS302
OCR Text ... ) 0.450 0.400 0.350 0.300 0.250 0.200 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 1 GHz 1.E+05 1 GHz 1.E+04 100 MHz ...440 0.430 0.420 0.410 0.400 500.0 100 MHz Rs ( Ohms ) 1 GHz 1.00 0.10 0.01 Ls ( nH )...
Description Surface Mount Monolithic PIN Diode Chip 表面贴装芯片单片PIN二极

File Size 55.50K  /  3 Page

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    MRF1507 MRF1507T1

MOTOROLA[Motorola, Inc]
Part No. MRF1507 MRF1507T1
OCR Text ... 50 40 0 0 50 100 150 200 250 300 350 IDQ, GATE CURRENT (mA) 400 450 500 4 5 7 8 VDD, DRAIN VOLTAGE (V) 6 30 10 Figure 6. Output...440 470 500 520 Zin 3.6 - j3.1 4.0 - j3.7 3.1 - j4.4 2.0 - j2.71 1.9 - j3.5 ZOL* 2.5 - j0.5 2.7 - ...
Description LATERAL NCHANNEL BROADBAND RF POWER MOSFET

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    MRF151G

MOTOROLA[Motorola, Inc]
Part No. MRF151G
OCR Text ..., DRAIN CURRENT (AMPS) 2A 1A 250 mA 100 mA 25 50 75 TC, CASE TEMPERATURE (C) TC = 25C 10 0 100 1 2 20 VDS, DRAIN-TO-SOU...440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC MILLIMETERS MI...
Description N-CHANNEL BROADBAND RF POWER MOSFET

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    MRF275 MRF275L

MACOM[Tyco Electronics]
Part No. MRF275 MRF275L
OCR Text ...ameled Ferroxcube VK200 19/4B 0.250 x 0.800, Microstrip Line 0.250 x 0.400, Microstrip Line 0.250 x 1.25, Microstrip Line 0.062 Glass Teflon...440 S11 S22 |S11| |S22| 0.936 0.938 0.937 0.937 0.938 0.938 0.939 0.939 0.939 0.940 0.940 0.940 0.9...
Description N-CHANNEL BROADBAND RF POWER FET

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    TA32910Q TA32914Q TA329Q TA32912Q

DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Part No. TA32910Q TA32914Q TA329Q TA32912Q
OCR Text ...L = 3, Tcase = 25oC Typ. Max. 4 250 7 10 50 15 Units V mA V A W W 3/10 TA329..Q CURVES Notes: 1. VD 600V. 2. VR = DF451 Diode vol...440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia &...
Description Asymmetric Thyristor

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