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ADPOW[Advanced Power Technology]
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| Part No. |
APTM120A20D
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| OCR Text |
...s 50% duty cycle IF = 120A IF = 2400a IF = 120A IF = 120A VR = 800V di/dt = 400A/s IF = 120A VR = 800V di/dt = 400A/s
T c = 70C
Min 1200
Typ 120 2 2.3 1.8 400 470 2.4 8
Max
Unit V A V
July, 2004 2-6 APTM120U20D Rev 0
2.5
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| Description |
Phase leg with Series diodes MOSFET Power Module
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| File Size |
296.82K /
6 Page |
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Mitsubishi Electric, Corp. POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM1200HB-66H
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| OCR Text |
...GE = 0V IE = 1200A, die / dt = -2400a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.80 4.00 180 18.0 5... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
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| File Size |
50.20K /
4 Page |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM1200HC-50H
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| OCR Text |
...GE = 0V IE = 1200A, die / dt = -2400a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 2.80 3.15 180 13.5 6... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
57.06K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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| Part No. |
CM1200HC-66H
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| OCR Text |
...GE = 0V IE = 1200A, die / dt = -2400a / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.30 3.60 180 18.0 5... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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| File Size |
52.44K /
4 Page |
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it Online |
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http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
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| Part No. |
DFM1200EXM12-A000
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| OCR Text |
...F (max) IFM
1200V 1.9V 1200A 2400a
External connection 1(C1) 2(C2) 3(C3)
APPLICATIONS
s Chopper Diodes s Boost and Buck Converters s Free-wheel Circuits s Snubber Circuits s Resonant Converters s Induction Heating s Multi-level Sw... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
119.16K /
7 Page |
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it Online |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
DFM1200FXM12-A000
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| OCR Text |
...al Diodes Can Be Paralleled for 2400a Rating s MMC Baseplate With AlN Substrates
KEY PARAMETERS VRRM VF (typ) (max) IF (max) IFM
1200V 1.9V 1200A 2400a
External connection 1(C1) 2(C2)
APPLICATIONS
s Chopper Diodes s Boost and B... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
99.22K /
7 Page |
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it Online |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
DFM1200FXM18-A000
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| OCR Text |
...al Diodes Can Be Paralleled for 2400a Rating s MMC Baseplate With AlN Substrates
KEY PARAMETERS VRRM (typ) VF (max) IF (max) IFM
1800V 2.0V 1200A 2400a
External connection 1(C1) 2(C2)
APPLICATIONS
s Brake Chopper Diode s Boost ... |
| Description |
Fast Recovery Diode Module Preliminary Information
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| File Size |
99.61K /
7 Page |
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it Online |
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DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
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| Part No. |
DIM1200ESM33-A000 ESM33-A000
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| OCR Text |
...p) (max) (max) 3300V 3.2V 1200A 2400a
External connection C1 Aux C C2 C3
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
APPLICATIONS
s s s
High Reliabil... |
| Description |
Single Switch IGBT Module Preliminary Information
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| File Size |
194.37K /
10 Page |
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Dynex Semiconductor Ltd. DYNEX[Dynex Semiconductor]
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| Part No. |
DIM600DCM17-A000
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| OCR Text |
...00V to 3300V and currents up to 2400a. The DIM600DCM17-A000 is a 1700V, n channel enhancement mode insulated gate bipolar transistor (IGBT) chopper module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short cir... |
| Description |
IGBT Chopper Module
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| File Size |
180.92K /
11 Page |
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it Online |
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