Part Number Hot Search : 
HV9922N3 P6SMB8 1608L DTD143E YAW200 TEA1118 MJE3055 2N7225
Product Description
Full Text Search
  20w 100ms Datasheet PDF File

For 20w 100ms Found Datasheets File :: 148    Search Time::1.594ms    
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    A5N1000.30H A5N1000.32H

AEGIS SEMICONDUTORES LTDA
Part No. A5N1000.30H A5N1000.32H
OCR Text ... C, 12V anode. Gate pulse: 10V, 20w, 100ms. TC = 25OC, 12V anode. Initial IT = 15A. TC = 25 C, VD = rated VDRM , 50A resistive load. Gate pulse: 10V, 20w, 20ms, 0.1ms rise time. TJ = 125OC, ITM = 1000A, di/dt = 25A/ms, VR = -50V. dv/dt = 20...
Description Phase Control Thyristors

File Size 329.37K  /  4 Page

View it Online

Download Datasheet





    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
Part No. SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712-A4 SGB20N60 SGP20N60
OCR Text ... 40A 120w 100W 80W 60W 40W 20w 0W 25C IC, COLLECTOR CURRENT 50C 75C 100C 125C Ptot, POWER DISSIPATION 140W 30A 20A 1...100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of ...
Description    Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)

File Size 263.73K  /  12 Page

View it Online

Download Datasheet

    A5N300.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N300.20H
OCR Text ...esistive load. Gate pulse: 10V, 20w, 10ms, 1ms rise time. TJ = 125O C, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated VDRM. Gate: 0V, 100 W. TJ = 125 C, Exp. To 67% V DRM, gate open. O TJ = 125 C, Rated VRRM and VDRM, ...
Description Phase Control Thyristors

File Size 492.22K  /  4 Page

View it Online

Download Datasheet

    A5N600.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N600.20H
OCR Text ...esistive load. Gate pulse: 10V, 20w, 10ms, 1ms rise time. TJ = 125O C, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125OC, Exp. To 67% V DRM, gate open. O TJ = 125 C, Rated VRRM and VDRM,...
Description Phase Control Thyristors

File Size 609.57K  /  4 Page

View it Online

Download Datasheet

    A5N850.20H

AEGIS SEMICONDUTORES LTDA
Part No. A5N850.20H
OCR Text ...esistive load. Gate pulse: 10V, 20w, 10ms, 1ms rise time. TJ = 125O C, ITM = 550A, di/dt = 40A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125OC, Exp. To 67% V DRM, gate open. TJ = 125O C, Rated VRRM and VDRM, g...
Description Phase Control Thyristors

File Size 638.71K  /  4 Page

View it Online

Download Datasheet

    A1N16.02J A1N16.04J

AEGIS SEMICONDUTORES LTDA
Part No. A1N16.02J A1N16.04J
OCR Text ...esistive load. Gate pulse: 10V, 20w, 10ms, 1ms rise time. TJ = 125OC, ITM = 500A, di/dt = 25A/ms, VR = 50V. dv/dt = 20 V/ms lin. to rated V DRM. Gate: 0V, 100 W. TJ = 125OC. Exp. to 100% or lin. Higher dv/dt values To 80% V DRM, gate open. ...
Description Phase Control Thyristors

File Size 547.49K  /  4 Page

View it Online

Download Datasheet

    INFINEON[Infineon Technologies AG]
Infineon Technologies A...
Part No. SGW15N60 SGB15N60 SGP15N60
OCR Text ...W 30A 120w 100W 80W 60W 40W 20w 0W 25C IC, COLLECTOR CURRENT 50C 75C 100C 125C Ptot, POWER DISSIPATION 25A 20A 15A 10A 5A 0A 2...100ms 1s Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of ...
Description IGBTs & DuoPacks - 15A 600V TO247AC IGBT
IGBTs & DuoPacks - 15A 600V TO263AB SMD IGBT
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology

File Size 411.41K  /  12 Page

View it Online

Download Datasheet

    ARTESYN[Artesyn Technologies]
Part No. NFS42-7627 NFS42 NFS42-7608 NFS42-7610
OCR Text ...NATURAL CONVECTION COOLING 25W 20w Mechanical notes A A standard L-bracket and cover is available for mounting which contains all screws, connectors and necessary mounting hardware. Details are on page 83. Order part number `NFS50 COVE...
Description Triple output 40 to 50 Watt AC/DC universal input switch mode power supplies

File Size 51.00K  /  2 Page

View it Online

Download Datasheet

    INFINEON[Infineon Technologies AG]
Part No. IGP01N120H2 IGB01N120H2 IGD01N120H2 IGB01N120H2E3045A
OCR Text ...j 150C) 30W 4A 25W 20w 15W IC, COLLECTOR CURRENT POWER DISSIPATION 3A 2A 10W Ptot, 1A 5W 0W 25C ...100ms 0V 0nC 5nC 10nC 15nC tp, PULSE WIDTH Figure 17. IGBT transient thermal impedanc...
Description 1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT D2Pak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT DPak
IGBTs & DuoPacks - 1A 1200V HighSpeed2 IGBT TO220
HighSpeed 2-Technology
From old datasheet system

File Size 387.25K  /  13 Page

View it Online

Download Datasheet

    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS5ASH-06
OCR Text ...RACTERISTICS (TYPICAL) 20 PD = 20w VGS = 5V 4V 3V Tc = 25C Pulse Test 2.5V DRAIN CURRENT ID (A) 16 DRAIN CURRENT ID (A) 8 12 6 8 2V 4 1.5V 4 1.5V 2 0 0 1.0 2.0 3.0 4.0 5.0 0 0 ...
Description ER 19C 19#16 PIN RECP LINE RoHS Compliant: No
HIGH-SPEED SWITCHING USE

File Size 37.31K  /  4 Page

View it Online

Download Datasheet

For 20w 100ms Found Datasheets File :: 148    Search Time::1.594ms    
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of 20w 100ms

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.1564428806305