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  20v 0.25a Datasheet PDF File

For 20v 0.25a Found Datasheets File :: 2354    Search Time::1.656ms    
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    FGW30N60VD

Fuji Electric
Part No. FGW30N60VD
OCR Text ...rrent i ges v ce = 0v, v ge = 20v - - 200 na gate-emitter threshold voltage v ge (th) v ce = +20v, i c = 30ma 6.2 6.7 7.2 v collector-em...0.7 - turn-on delay time t d(on) t j = 175c v cc = 400v i c = 30a v ge = 15v r g = 10 l = 500h ...
Description Discrete IGBT (High-Speed V series) 600V / 30A

File Size 486.21K  /  8 Page

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    HU603AL

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HU603AL
OCR Text ...V, ID=250uA VDS=30V, VGS=0V VGS=20v, VDS=0V VGS=-20v, VDS=0V Min 30 Typ Max Unit V 10 uA 100 nA -100 nA RDS(on) Static Drain-Source On-Re...0 7V 6V VGS= 4V On-Resistance Variation With Gate Voltage & Drain Current Normalized Drain-Sou...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 59.34K  /  5 Page

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    FDPF5N60NZ FAIRCHILDSEMICONDUCTORCORP-FDPF5N60NZ

Fairchild Semiconductor
Part No. FDPF5N60NZ FAIRCHILDSEMICONDUCTORCORP-FDPF5N60NZ
OCR Text ...orward transconductance v ds = 20v, i d =2.25a - 5 - s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 450 600...0.9 - c notes: 1. repetitive rating: pulse width limit ed by maximum junction temperature 2. l = ...
Description N-Channel MOSFET 600V, 4.5A, 2.0Ω

File Size 291.92K  /  10 Page

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    Fairchild Semiconductor, Corp.
Part No. FDPF5N50FT
OCR Text ...orward transconductance v ds = 20v, i d = 2.25a (note 4) -4.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 4...0. 1 2 - c notes: 1: repetitive rating: pulse width limi ted by maximum junction temper...
Description 500V N-Channel MOSFET, FRFET; Package: TO-220F; No of Pins: 3; Container: Rail 4.5 A, 500 V, 1.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 421.49K  /  10 Page

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    FDPF5N50FT12 FDP5N50F12

Fairchild Semiconductor
Part No. FDPF5N50FT12 FDP5N50F12
OCR Text ...orward transconductance v ds = 20v, i d = 2.25a (note 4) -4.3-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 4...0.1 1 10 0.1 1 10 0.04 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0v ...
Description N-Channel MOSFET, FRFET 500V, 4.5A, 1.55Ω

File Size 454.76K  /  10 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. IRFZ44N
OCR Text ...ard leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 63 i d = 25a ...0.25in.) from package and center of die contact c iss input capacitance CCC 1470 CCC v gs = 0v c os...
Description HEXFET? Power MOSFET

File Size 235.11K  /  8 Page

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    IRGP450UD2

International Rectifier
Part No. IRGP450UD2
OCR Text ...kage current ? ? 100 na v ge = 20v irgp450ud2 switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristic...0.1%. repetitive rating; v ge =20v, pulse width limited by max. junction temperature. ( see fig. 20...
Description 500V Copack IGBT in a TO-3P (TO-247AC) package

File Size 40.39K  /  2 Page

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    SKP15N6008 SKW15N60

Infineon Technologies AG
Infineon Technologies A...
Part No. SKP15N6008 SKW15N60
OCR Text ...urrent i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =15a 3 10.9 - s dynamic characteristic input...0.197 in.) from case l e pg-to-220-3-1 pg-to-247-3-21 - - 7 13 - - nh short circuit coll...
Description Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
   Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

File Size 371.42K  /  14 Page

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    FGA25S125P

Fairchild Semiconductor
Part No. FGA25S125P
OCR Text ...60 200 15v 9v 10v v ge = 7v 8v 20v t c = 175 o c 17v 12v collector current, i c [a] collector-emitter voltage, v ce [v] 0.0 2.0 4.0 6.0 8.0 10.0 0 40 80 120 160 200 7v v ge =17v 20v 15v 12v 9v 10v 8v t c = 25 o c collector current,...
Description Shorted AnodeTM IGBT

File Size 685.35K  /  8 Page

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