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5A102 MC10E131 TV0125A FM209 1N4001 CHA5215A 1N6693TX SEBLC08C
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  20.6a Datasheet PDF File

For 20.6a Found Datasheets File :: 13557    Search Time::1.281ms    
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    2SC4056

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4056
OCR Text ...requency fT V = 10V, 0.8A = STD 20 Hz M CE C I Turn on Time ton I = 4A Max 0.5 C Storage Time = ts I = 0.8A,1.6A Max 2.0Es B1 B2 I Fall Time tf R= 37.5,4V = Max 0.2 L BB2 V 2SC4056 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C...
Description Switching Power Transistor(8A NPN)

File Size 386.82K  /  12 Page

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    2SC4057

SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No. 2SC4057
OCR Text ... 5 Max 1.0 Max 1.5 Max 1.56 STD 20 Max 0.5 Max 2.0 Max 0.2 Unit V V V A A W Nm Electrical Characteristics (Tc=25) Item Symbol Colle...6A RL = 37.5, VBB2 = 4V Unit V mA mA V V /W MHz s 2SC4057 hFE - I C VCE = 5V 100 Tc...
Description Switching Power Transistor(8A NPN)

File Size 510.73K  /  12 Page

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    2SC4559

PANASONIC[Panasonic Semiconductor]
Part No. 2SC4559
OCR Text ... 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q High collector to emitter VCEO High-speed switching Full-pa...6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 150V 5....
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.09K  /  3 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...ote3 Note2 Note1 Ratings -60 20 -12 -48 -12 -12 12 25 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10...6A, VGS = -10V Note4 I D = -6A, VGS = -4V Note4 I D = -6A, VDS = -10V VDS = -10V VGS = 0 f = 1MHz VG...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ... D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalenche current...6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ545

HITACHI[Hitachi Semiconductor]
Part No. 2SJ545
OCR Text ... D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalenche current...6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.81K  /  9 Page

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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ... D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalenche current...6A, VGS = -10V I D = -6A, VGS = -4V Note4 Note4 Note4 Drain to source breakdown voltage V(BR)DSS...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SJ560

SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
Part No. 2SJ560
OCR Text ...view) Conditions Ratings -20 10 -1.5 -6 1.3 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ceramic board (250mm2x 0.8mm)...6A 100s 1 10 ms ms 1 I D =- 1.5A 00m s DC op er at Switching Time, SW Time - ns VDD =-10V VGS...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
Zener Diode; Zener Voltage Typ, Vz:25V; Vz Test Current, Izt:500mA; Power Dissipation, Pd:50W; Package/Case:DO-5; Mounting Type:Through Hole 超高速开关应

File Size 182.72K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...w) Conditions Ratings -60 20 -1.2 -4.8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ceramic board (250mm2x 0.8mm) ...6A ID=-0.6A, VGS=-10V ID=-0.4mA, VGS=-4V -1.0 0.9 1.2 620 800 800 1150 Conditions Ratings min -60 -1...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), ...6A VGS=10V RGS=25 IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C ID=3A Min. 150 1,0...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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