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  2.5v 1.8v Datasheet PDF File

For 2.5v 1.8v Found Datasheets File :: 58987    Search Time::6.156ms    
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    ICM7226 ICM7226A ICM7226ALJL ICM7226B ICM7226BLPL FN3169

INTERSIL[Intersil Corporation]
Part No. ICM7226 ICM7226A ICM7226ALJL ICM7226B ICM7226BLPL FN3169
OCR Text ...lexed at a 500Hz rate with a 12.2% duty cycle for each digit. The ICM7226A is designed for common anode displays with typical peak segment c...5V Maximum Digit Output Current . . . . . . . . . . . . . . . . . . . . . . . . 400mA Maximum Segmen...
Description From old datasheet system
8-Digit, Multi-Function, Frequency Counter/Timer

File Size 172.61K  /  19 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow prop...5V IRF234, IRF235 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERA...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...S = 4.5V, ID = 28A 11 22 VGS = 2.8V, ID = 18A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) ...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text ...ts --- V --- V/C 12.0 13.5 m 29 2.0 V 20 A 100 200 nA -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 15A VGS = 4.5V, I D = 12A VGS = 2.8V, ID = 7.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... D D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Volta...5V, ID = 16A VDS = VGS, ID = 250A e e mV/C A VDS = 16V, VGS = 0V nA S VDS = 16V, VGS = 0V, TJ ...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF5305L) is available for lowprofile...5V - 5.0V BOTTOM - 4.5V 1000 -ID , D rain-to-S ource C urrent (A ) -ID , D rain-to-S ourc e...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...apacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- -...5V - 5.0V BOT TOM - 4.5V TO P 1000 -ID , D rain-to-S ou rc e C urre nt (A ) -ID , D rain-to...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...aded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITI...5V 4.8 V 4.6 V 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain-Source Voltage, VDS (V) 1.6 4.4 V 1.8 2 Fig.2. Nor...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ...G 1 8 7 A A D D D D 2 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented...5V) Pulsed Drain Current Power Dissipation TA = 25C TL = 90C Junction & Storage Temperature Range Co...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) 5-20 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ES...5V 1 0 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE O...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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For 2.5v 1.8v Found Datasheets File :: 58987    Search Time::6.156ms    
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