| |
|
 |
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| Part No. |
MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C1000AMC-15 MX27C1000AMC-90 MX27C1000AMI-10 MX27C1000AMI-12 MX27C1000AMI-15 MX27C1000AMI-90 MX27C1000APC-10 MX27C1000APC-12 MX27C1000APC-15 MX27C1000APC-90 MX27C1000API-10 MX27C1000API-12 MX27C1000API-15 MX27C1000API-90 MX27C1000AQC-10 MX27C1000AQC-12 MX27C1000AQC-15 MX27C1000AQC-90 MX27C1000AQI-10 MX27C1000AQI-12 MX27C1000AQI-15 MX27C1000AQI-90 MX27C1000ATC-10 MX27C1000ATC-12 MX27C1000ATC-15 MX27C1000ATC-90 MX27C1000ATI-10 MX27C1000ATI-12 MX27C1000ATI-15 MX27C1000ATI-90
|
| OCR Text |
1M-BIT [128K x 8] CMOS EPROM
FEATURES
* * * * * *
128K x 8 organization Single +5V power supply +12.5V programming voltage Fast acces...Byte 0 ( A0 = VIL) represents the manufacturer code, and byte 1 (A0 = VIH), the device identifier co... |
| Description |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
| File Size |
935.18K /
15 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Fujitsu, Ltd.
|
| Part No. |
MB98A809AX
|
| OCR Text |
...e memory card 256k / 512k / 1m / 2m-byte description the fujitsu mb98a808ax, mb98a809ax, mb98a810ax and mb98a811ax are flash electrically erasable and programmable (flash) memory cards capable of storing and retrieving large amounts o... |
| Description |
512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K电可擦除可编程闪速存储器 12k闪光Eelectrically可擦除和可编程（闪存）记忆卡（为512k电可擦除可编程闪速存储器卡）
|
| File Size |
364.43K /
48 Page |
View
it Online |
Download Datasheet |
| |
|
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| Part No. |
CY7C1170V18-300BZXI CY7C1170V18-300BZC CY7C1170V18-300BZI CY7C1170V18-300BZXC CY7C1177V18-300BZXC CY7C1177V18-300BZXI CY7C1170V18-333BZXI CY7C1177V18-333BZXI CY7C1168V18-300BZC CY7C1168V18-300BZXI CY7C1177V18-333BZC CY7C1166V18-333BZXC CY7C1166V18-333BZC
|
| OCR Text |
...8 mbit density (2m x 8, 2m x 9, 1m x 18, 512k x 36) 300 mhz to 400 mhz clock for high bandwidth 2-word burst for reducing address bus freq...byte write select 0, 1, 2, and 3 ? active low . sampled on the rising edge of the k and k clocks ... |
| Description |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
| File Size |
957.10K /
27 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
