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1100a Datasheet PDF File

For 1100a Found Datasheets File :: 81 Search Time::1.343ms
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					MDE Semiconductor, Inc.
Part No.	MAX-50M
OCR Text	...0 5% volt clamping voltage @ 1100a / 10x1000 sec waveform vc 69 max volt reverse leakage @ 45.9v ir 20 max a 0.20 0.01 (5.25 0.26) dimensions in inches and (millimeters) 0.45 max (11.40 max) 0.787 min (20.0 min) 0.049 .00...
Description	HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR
File Size	19.67K / 1 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	SKW30N60HS SKW30N60HS08
OCR Text	... r =400v, i f =30a, di f /dt =1100a/ s - 580 a/ s 2) leakage inductance l a nd stray capacity c due to test circuit in figure e. skw30n60hs power semiconductors 4 rev. 2.2 sep 08 switching chara...
Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size	347.82K / 14 Page	View it Online	Download Datasheet

					Naina Semiconductor
Part No.	1004DCR
OCR Text	...e range v rrm , v drm peak = 1100a) v tm i h i l v t0 r t a - 10 04dcr 4205450 ? fax: 0120 -4273653 i drm /i rrm , maximum at t j = t j maximum ma 60 values units 200 a/s 10 s 200 symbol values u...
Description	Phase Control Thyristor Capsules
File Size	193.05K / 2 Page	View it Online	Download Datasheet

					Infineon Technologies AG
Part No.	SKW20N60HS SKW20N60HS08
OCR Text	... r =400v, i f =20a, di f /dt =1100a/ s - 540 a/ s 1) allowed number of short circuits: <1 000; time between short circuits: >1s. 2) leakage inductance l a nd stray capacity c due to test circuit in figure e. ...
Description	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
File Size	346.23K / 14 Page	View it Online	Download Datasheet

					http:// Mini-Circuits
Part No.	KSN-1100a-119
OCR Text	...cs & shopping online see tm ksn-1100a-119 + frequency s ynthesizer 50 ? 1095.4 to 1100.6 mhz the big deal ? low phase noise and spurious ? robust design and construction ? small size 0.80" x 0.58" x 0.15" product overview th e k...
Description	Frequency Synthesizer
File Size	734.93K / 10 Page	View it Online	Download Datasheet

					Infineon
Part No.	SKW20N60HS
OCR Text	...v r =400v, i f =20a, di f /dt =1100a/ s - 540 a/ s 1) allowed number of short circuits: <1000; time between short circuits: >1s. 2) leakage inductance l and stray capacity c due to test circuit in figure e. skw20n60hs ^ power ...
Description	IGBTs & DuoPacks - 20A 600V TO247 IGBT Diode
File Size	436.11K / 14 Page	View it Online	Download Datasheet

					Dynex Semiconductor
Part No.	DIM100WHS12-A000
OCR Text	...= 100a, v r = 600v, di f /dt = 1100a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge diode reverse current diode reverse recovery e...
Description	IGBT Power Module
File Size	322.24K / 8 Page	View it Online	Download Datasheet

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