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NTE[NTE Electronics]
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| Part No. |
NTE262 NTE261
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| OCR Text |
... . 62.5C/W Note 1. IC = 1A, L = 100mh, P.R.F. = 10Hz, VCC = 20V, RBE = 100.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current E... |
| Description |
Silicon complementary PNP transistor. Darlington power amplifier.
Silicon Complementary Transistors Darlington Power Amplifier
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| File Size |
24.11K /
2 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA09A PA09
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| OCR Text |
...V 500F 24mH 20V 2500F 75mH 15V 100mh
SUPPLY CURRENT
When swinging large signals, the output stage of the PA09 demands extra supply current. The following graphs illustrate this current for several conditions for both sine and square wa... |
| Description |
VIDEO POWER OPERATIONAL AMPLIFIERS
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| File Size |
227.99K /
5 Page |
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APEX[Apex Microtechnology]
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| Part No. |
PA61A PA61
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| OCR Text |
...0mF 400mH 20mH 15V 20mF 10mF ** 100mh * If the inductive load is driven near steady state conditions, allowing the output voltage to drop more than 8V below the supply rail with ILIM = 10A or 15V below the supply rail with ILIM = 5A while t... |
| Description |
POWER OPERATIONAL AMPLIFIERS
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| File Size |
184.59K /
4 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
SSS6N90A
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| OCR Text |
...imum Junction Temperature 2 O L=100mh, I AS=3.5A, VDD=50V, RG=27, Starting T J =25 C _ _ < 3 O ISD < 6A, di/dt <140A/ s, VDD _ BVDSS , Starting T J =25 C
_ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essentially Independen... |
| Description |
Advanced Power MOSFET
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| File Size |
263.00K /
7 Page |
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it Online |
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ETC [ETC]
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| Part No. |
PA51A PA51
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| OCR Text |
...
4.3mH 5.0mH 6.2mH 15mH
20mH 100mh
SAFE OPERATING AREA (SOA)
The output stage of most power amplifiers has three distinct limitations: 1. The current handling capability of the transistor geometry and the wire bonds. 2. The second br... |
| Description |
From old datasheet system
POWER OPERATIONAL AMPLIFIERS
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| File Size |
67.27K /
4 Page |
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it Online |
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Sanyo
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| Part No. |
2SC5476
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| OCR Text |
...=0 V(BR)CEO IC=1mA, RBE= Es/b L=100mh, RBE=100 Conditions Ratings min 85 85 15 typ 95 95 max 105 105 Unit V V mJ
Es/b Test Circuit
TUT L +VCC
SW
IB
RBE
6k
200 VCC=20V RBE=100 Tc=25C
3.0
I C - VCE
4mA 6mA 8mA
2m A
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| Description |
3 A, 85 V, NPN, Si, POWER TRANSISTOR
NPN Epitaxial Planar Silicon Darlington Transistor
Darlington Transistors
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| File Size |
39.06K /
4 Page |
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it Online |
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