1.85.91 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	..., for 10 seconds Max. 8.0 5.1 32 125 3.1 1.0 30 5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topo...85 VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400V, VGS =...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	..., for 10 seconds Max. 8.0 5.1 28 3.1 125 1.0 30 510 8.0 13 3.5 -55 to + 150 300 (1.6mm from case) Units A W W W/C V mJ A mJ V/ns C ...85 VGS = 10V, ID = 4.8A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 4.8A 25 VDS = 500V, VGS =...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	...-4.0 4.8 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (....
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	...0 -11 14 -5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to...85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (....
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	LNA2701L LN159
OCR Text	... output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 2....85 Unit mW mA A V C C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = ...
Description	GaAs Bi-directional Infrared Light Emitting Diode
File Size	43.01K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	LPC2292 LPC2292FBD144 LPC2294JBD LPC2294 LPC2294JBD144
OCR Text	...bruary 2004 Preliminary data 1. General description The LPC2292/LPC2294 are based on a 16/32 bit ARM7TDMI-STM CPU with real-time emulati...85 -40 to +125 Type number LPC2292FBD144 LPC2294JBD144 9397 750 12748 (c) Koninklijke Philips ...
Description	16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN 10-bit ADC and external memory interface 16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN, 10-bit ADC and external memory interface
File Size	164.40K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M62382FP
OCR Text	...e value). 99 100 27 26 1 2 24 25 OUTLINE 100P6Q APPLICATION *High precision measurement equipments such as memory t...85 84 83 82 81 80 79 78 NC 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 6...
Description	5V TYPE 12-BIT 4CH COMPOSITE MULTIPLYING D-A CONVERTER
File Size	48.25K / 8 Page	View it Online	Download Datasheet

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