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SHANGHAI BELLING CO., L...
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| Part No. |
BLM3400
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| OCR Text |
... a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.4 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (not... |
| Description |
N-Channel Enhancement Mode Power MOSFET
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| File Size |
76.45K /
4 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSN3400L
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| OCR Text |
... a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.4 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (... |
| Description |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
383.53K /
6 Page |
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it Online |
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New Jersey Semiconductor
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| Part No. |
1N5651/1 1N5649A 1N5648 1N5655A 1N5658 1N5646 1N5661
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| OCR Text |
1 us a 1n5 6 serie s feature s ? hermeticall y seale d ? breakdow n voltag e rang e 6. 8 - 20 0 volt s ? glas s passivate d jun...59m m fro m case ) ?polarity : cathod e indicate d b y colou r ban d ?weight : 1. 5 gramme ... |
| Description |
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 40.2V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 38.1V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 34.8V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 70.1V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 29.1V 1.5KW 2-Pin DO-13 Diode TVS Single Uni-Dir 121V 1.5KW 2-Pin DO-13
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| File Size |
132.95K /
2 Page |
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it Online |
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Cypress
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| Part No. |
CYP15G0401DXB-BGXC CYP15G0401DXB-BGXI
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| OCR Text |
...scription the cyp(v)15g0401dxb [1] quad hotlink ii? transceiver is a point-to-point or point-to-multipoint communications building block ...59m and smpte 292m pathological test requirements. system host serial links 10 10 10 10 10 10 10 10... |
| Description |
Quad HOTLink IITransceiver
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| File Size |
615.56K /
55 Page |
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it Online |
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MORE Semiconductor Comp...
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| Part No. |
MSN3402A
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| OCR Text |
... a drain current-pulsed (note 1) i dm 30 a maximum power dissipation p d 1.4 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (... |
| Description |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
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| File Size |
385.58K /
6 Page |
View
it Online |
Download Datasheet
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