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				VML[Vanguard International Semiconductor]
Part No.	VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V18165CJ-6 VG26VS18165C VG2618165C
OCR Text	1,048,576 x 16 - Bit CMOS Dynamic RAM The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a singl...
Description	1,048,576 x 16 - Bit CMOS EDO DRAM 1,048,576 x 16 - Bit CMOS Dynamic RAM
File Size	227.81K / 27 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG3617161ET VG3617161ET-6 VG3617161ET-7 VG3617161ET-8
OCR Text	1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a sin...
Description	CMOS Synchronous Dynamic RAM
File Size	1,124.02K / 69 Page	View it Online	Download Datasheet

				VML[Vanguard International Semiconductor]
Part No.	VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG3617801CT
OCR Text	...onous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standa...
Description	16Mb CMOS Synchronous Dynamic RAM
File Size	1,003.20K / 68 Page	View it Online	Download Datasheet

				ETC[ETC] VML[Vanguard International Semiconductor]
Part No.	VG36641641DT VG36641641DT-6 VG36641641DT-7 VG36641641DT-7L VG36641641DT-8H VG36641641DTL-6 VG36641641DTL-7 VG36641641DTL-7L VG36641641DTL-8H VG36644080_1641DTL-7 VG36644080_1641DTL-7L VG36644080_1641DTL-8H VG36644041DT VG36644041DT-6 VG36644041DT-7 VG36644041DT-7L VG36644041DT-8H VG36644041DTL-6 VG36644041DTL-7 VG36644041DTL-7L VG36644041DTL-8H VG36648041DT VG36648041DT-6 VG36648041DT-7 VG36648041DT-7L VG36648041DT-8H VG36648041DTL-6 VG36648041DTL-7 VG36648041DTL-7L VG36648041DTL-8H VG366440_80_1641DT_L-6 VG366440_80_1641DT_L-7 VG366440_80_1641DT_L-7L VG366440_80_1641DT_L-8H
OCR Text	... x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs ar...
Description	CMOS Synchronous Dynamic RAM
File Size	1,361.89K / 69 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3582AASB TH50VSF3583AASB
OCR Text	...retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 A maximum (SRAM CMOS level...048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * PIN ASSIGNMENT (TOP VIEW...
Description	TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	535.38K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3680 TH50VSF3681AASB TH50VSF368
OCR Text	...retention supply voltage VCCs = 1.5 V~3.3 V Current consumption Operating: 45 mA maximum (CMOS level) Standby: 10 A maximum (SRAM CMOS level...048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * Function mode control fo...
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	580.07K / 55 Page	View it Online	Download Datasheet

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