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				Sanken electric
Part No.	SI7300A
OCR Text	... Open SPM : Rm = 3.6/ : Lm = 9.0mh/ ZD : VZ = 60V B A F.C SI-7330A ZD + 100 F 50V VCC1 VCC2 + 2.2 F 10V 9 16 15 14 13 8 2 10k 82x4 A B 13 8 SI-7330A 1 16 ZDA ZDB + 100F 50V VCC1 IO A1 Excitation signal i...
Description	Unipolar Driver ICs
File Size	66.37K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SFU2955 SFR_U2955 SFR2955 SFRU2955
OCR Text	... Junction Temperature O 2 O L=2.0mh, I AS=-7.6A, V DD=-25V, R G=27*, Starting T J =25ooC _ _ _ 3 O ISD < -9.4A, di/dt < 250A/ s, VDD < BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essentially Independ...
Description	P-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	257.43K / 7 Page	View it Online	Download Datasheet

				http:// Fairchild Semiconductor
Part No.	SFU9024 SFU9024TU
OCR Text	...imum Junction Temperature 2 L=3.0mh, I =-7.8A, V =-25V, R =27*, Starting T =25oC O AS DD G J 3 _ _ _ O ISD < -9.7A, di/dt < 250A/s, VDD< BVDSS , Starting TJ =25oC 4 _ O Pulse Test : Pulse Width = 250s, Duty Cycle< 2% 5 O Essentially Indepen...
Description	Advanced Power MOSFET
File Size	226.82K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT1001RBLC APT1001RSLC APT1001
OCR Text	...3471 4 Starting T = +25C, L =20.0mh, R = 25W, Peak I = 11A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without...
Description	POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	FDP15N50 FDH15N50 FDB15N50
OCR Text	...ure 2: Starting TJ = 25C, L = 7.0mh, IAS = 15A Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 MOSFET symbol showing the integral reverse p-n junction diode. ISD = 15A D - 0.86 470 5 15 60 1.2 ...
Description	15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET 15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET
File Size	149.99K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFBL18N50K
OCR Text	...%. Starting TJ = 25C, L = 5.0mh, RG = 25, IAS = 18A, ISD 18A, di/dt TBDA/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com PROVISIONAL IRFB18N50K TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10 ....
Description	HEXFET? Power MOSFET
File Size	28.48K / 3 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFI9Z24
OCR Text	...imum Junction Temperature 2 L=2.0mh, I =-9.7A, V =-25V, R =27*, Starting T =25oC O AS DD G J 3 _ _ _ O ISD < -9.7A, di/dt < 250A/s, VDD< BVDSS , Starting TJ =25oC 4 _ O Pulse Test : Pulse Width = 250s, Duty Cycle< 2% 5 O Essentially Indepen...
Description	Advanced Power MOSFET
File Size	277.75K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	SFP9520 SFP9520NL
OCR Text	...imum Junction Temperature 2 L=6.0mh, I =-6A, V =-25V, R =27*, Starting T =25oC O AS DD G J 3 _ _ _ O ISD < -6A, di/dt < 350A/s, VDD < BVDSS , Starting TJ =25oC 4 _ O Pulse Test : Pulse Width = 250s, Duty Cycle< 2% 5 O Essentially Independen...
Description	100V P-Channel A-FET / Substitute of IRF9520 6 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Advanced Power MOSFET
File Size	226.75K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	ISL9N312AS ISL9N312AP3 ISL9N312AS3ST
OCR Text	...Avalanche Time ID = 2.9A, L = 3.0mh 195 s Drain-Source Diode Characteristics VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 32A ISD = 15A ISD = 32A, dISD/dt = 100A/s ISD = 32A, dISD/dt = 1...
Description	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
File Size	138.82K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFR2955 SFRU2955
OCR Text	... Junction Temperature O 2 O L=2.0mh, I AS=-7.6A, V DD=-25V, R G=27*, Starting T J =25ooC _ _ _ 3 O ISD < -9.4A, di/dt < 250A/ s, VDD < BVDSS , Starting T J =25 C _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essentially Independ...
Description	Advanced Power MOSFET
File Size	258.42K / 7 Page	View it Online	Download Datasheet

For 0mh Found Datasheets File :: 1524 Search Time::1.75ms
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