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  0.80-3.50v Datasheet PDF File

For 0.80-3.50v Found Datasheets File :: 16882    Search Time::1.891ms    
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    IRF1104

IRF[International Rectifier]
Part No. IRF1104
OCR Text ... VDSS = 40V G S RDS(on) = 0.009 ID = 100A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proce...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3...
Description Power MOSFET(Vdss=40V/ Rds(on)=0.009ohm/ Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A??
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A)
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=100A?

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... VDSS = 100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...80 100 120 140 160 180 V G S , G a te-to-S o urce V olta ge (V ) TJ , Junction Temperature (C)...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text 0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRF244, IRF245, IRF246, IRF247...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text ...nt)** Typ. --- --- Max. 0.65 40 Units C/W www.irf.com 1 02/14/02 IRF2807S/IRF2807L Electrical Characteristics @ TJ = ...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description HEXFET Power MOSFET HEXFET功率MOSFET
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text ...unction-to-Ambient Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 3/16/01 IRF2807 Electrical Characterist...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig ...
Description Power MOSFET(Vdss=75V, Id=82A?)
Power MOSFET(Vdss=75V, Id=82A)

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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text 0.40W@VGS = 10V VDSS 300V ID 1.6A l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capac...80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature ( C) Fig 3....
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... VDSS = 150V G S RDS(on) = 0.082 ID = 21A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C) Fig 3...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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