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  0.50-4.50v Datasheet PDF File

For 0.50-4.50v Found Datasheets File :: 22437    Search Time::2.937ms    
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    2SK3685-01

ETC
Part No. 2SK3685-01
OCR Text ... channel to ambient 0.532 50.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage ...
Description POWER MOSFET N-CHANNEL SILICON POWER MOSFET

File Size 136.89K  /  4 Page

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    IRG4PC50S-P

International Rectifier
Part No. IRG4PC50S-P
OCR Text ...pical socket mount Typ. --- 0.24 --- Max. 0.64 --- 40 Units C/W 1 www.irf.com 05/14/02 IRG4PC50S-P Electrical Charact...50% T J = 125 C T s ink = 90C Ga te drive as s pec ified Load Current ( A ) P o w e r D i ss i...
Description INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

File Size 144.00K  /  9 Page

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    IRG4PC30UPBF

International Rectifier
Part No. IRG4PC30UPBF
OCR Text ... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJ...50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 13 1100 73 14 Max. Units Conditions 75 IC =...
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

File Size 267.40K  /  9 Page

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    IRG4PC30SPBF

International Rectifier
Part No. IRG4PC30SPBF
OCR Text ... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm) from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter R...50 75 IC = 18A 7.3 11 nC VCC = 400V See Fig. 8 17 26 VGE = 15V 22 18 TJ = 25C ns 540 810 IC = 18A,...
Description INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT

File Size 243.53K  /  9 Page

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    IRG4PC30KPBF

International Rectifier
Part No. IRG4PC30KPBF
OCR Text ... 20 260 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Units V A s V mJ W C Thermal Resistance Paramete...50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 24W Clamp voltage: 80% o...
Description    INSULATED GATE BIPOLAR TRANSISTOR

File Size 249.95K  /  8 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... VDSS =100V G S RDS(on) = 0.036 ID = 42A Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...50 V DS 40 RD VGS RG D.U.T. + I D , Drain Current (A) -V DD 30 10V Pulse ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRG4PC30FPBF

International Rectifier
Part No. IRG4PC30FPBF
OCR Text ... 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbfin (1.1Nm) Units V A V mJ W C Thermal Resistance Parameter RJ...50 For both: 40 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipat...
Description INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT

File Size 267.48K  /  9 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...ation. VDSS = 100V RDS(on) = 0.04 ID = 41A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 2...50 RD VGS RG D.U.T. VDD ID, Drain Current (Amps) 40 10 V 30 Pulse Width 1 s Dut...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    SamHop Microelectronics
Part No. STT02N10
OCR Text ...-continuous -pulsed c a ver 1.0 www.samhop.com.tw may,08,2014 1 details are subject to change without notice. w p d c -55 to 150 t a =25 ...50 125 150 v gs =10v i d =1a v gs =4.5v i d =0.8a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 132.77K  /  8 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text 0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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