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  0.47mh Datasheet PDF File

For 0.47mh Found Datasheets File :: 67    Search Time::2.125ms    
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    Sumida, Corp.
SUMIDA CORP
Part No. RCH-895NP-9R2M RCH-895NP-393K
OCR Text ...ttom view ?max. 8.3 max. 9.5 5.0 ?0.7 5.0 max. 10.8 5.0 ?0.7 5.0 ?max. 8.3 ( 10h - 27 h ) ( 33 h - 1.0mh ) 4 1 3 2 4 1 3 2 max. 9.0 ?max. 10.3 3.5 4.0 5.0 ?0.7 >? $
Description 1 ELEMENT, 9.2 uH, GENERAL PURPOSE INDUCTOR
1 ELEMENT, 39000 uH, GENERAL PURPOSE INDUCTOR

File Size 165.69K  /  2 Page

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    FDB886010 FDB8860F085 FDB8860-F085

Fairchild Semiconductor
Part No. FDB886010 FDB8860F085 FDB8860-F085
OCR Text ...nverters june 20 10 _ fdb886 0 _f085 re v a www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted of f...47mh, i as = 64a , v dd = 30v, v gs = 10v. 2: pulse width = 100s this product has been designed t...
Description 30V N-Channel Logic Level PowerTrenchMOSFET
N-Channel Logic Level PowerTrench? MOSFET 30V, 80A, 2.6m

File Size 149.92K  /  7 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. IRFZ44N
OCR Text ...-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = 55v r ds(on) = 17.5m w i d = 49...47mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain indu...
Description HEXFET? Power MOSFET

File Size 235.11K  /  8 Page

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    IRFZ44N IRFZ44 IRFZ44NPBF

IRF[International Rectifier]
Part No. IRFZ44N IRFZ44 IRFZ44NPBF
OCR Text ...r M3 srew Max. 49 35 160 94 0.63 20 25 9.4 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C ...47mH D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Par...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)

File Size 98.67K  /  8 Page

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    SemeLAB
Part No. SML60B18
OCR Text 0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v dss i d i dm v gs v gsm p d t j , t...47mh, r g = 25 w , peak i l = 18a v dss 600v i d(cont) 18a r ds(on) 0.350 w w w w pin 1 C gate pin 2...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.41K  /  2 Page

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    International Rectifier, Corp.
Part No. IRFZ44NPBF
OCR Text ...-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 thermal resistance www.irf.com 1 v dss = 55v r ds(on) = 17.5...47mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain indu...
Description HEXFET-R Power MOSFET 的HEXFET - R的功率MOSFET

File Size 144.58K  /  8 Page

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    IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL
OCR Text ...SFET D VDSS = 55V RDS(on) = 0.0175 Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniqu...47mH Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 12 60 44 45 7.5 Source-Drain Ratings ...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB

File Size 150.74K  /  10 Page

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    APT6035SVR APT10088HVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6035SVR APT10088HVR
OCR Text 0.350 POWER MOS V (R) D3PAK Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technolo...47mH, R = 25, Peak I = 18A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 18A 0.350 Ohm

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    APT6035BVR

ADPOW[Advanced Power Technology]
Part No. APT6035BVR
OCR Text 0.350 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...47mH, R = 25, Peak I = 18A j G L 1 Repetitive Rating: Pulse width limited by maximum junction ...
Description POWER MOS V 600V 18A 0.350 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.29K  /  4 Page

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    YAGEO CORP
Part No. SCDS73102 SCDS73330 SCDS73390 SCDS62B101 SCDS62B120 SCDS62B181 SCDS62B270 SCDS62B331 SCDS62B390 SCDS62B3R5 SCDS74330 SCDS74102 SCDS74121 SCDS74270 SCDS73820 SCDS64B330 SCDS64B100 SCDS64B220 SCDS64B271 SCDS64B151 SCDS74561 SCDS125270
OCR Text ...e with magnetic shielding. 6.2 0.3 3.0max 5.9 0.3 6.6 0.3 4.6 6.6 1.5 6.2 4.5max 5.9 0.3 6.6 0.3 4.6 6.6 1.5 7.3 0.2 3.4max 7.3 0.2 5.0 7.3 1.8 7.3 0.2 4.5max 7.3 0.2 5.0 7.3 1.8 12.0 0.3 6.0max 5.0 12.0 0.3 7.6 11.8 12.0 0.3 8....
Description 1 ELEMENT, 1000 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 12 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 330 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 3.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 120 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 150 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
1 ELEMENT, 560 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD

File Size 46.76K  /  2 Page

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For 0.47mh Found Datasheets File :: 67    Search Time::2.125ms    
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