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  0.3-16v Datasheet PDF File

For 0.3-16v Found Datasheets File :: 13084    Search Time::2.36ms    
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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...sions unit:mm 2091A [2SJ502] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ... unit:mm 2083B [2SJ503] 6.5 5.0 4 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 1 2 3 7.5 0.5 2.3 2.3 1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP unit:mm 2092B [2SJ503] 6.5 5.0 4 2.3 ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D G S 12 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25C) Item...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ505(L), 2SJ505(S) Absolut...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2S...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ... * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ518 Abso...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D G 12 S 1. Gate 2. Drain 3. Source 3 2SJ526 Absolute Maximum Ratings (Ta = 25C) Item Drai...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ... * Low on-resistance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute M...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ... * Low on-resistance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ528(L),2SJ528(S) Absolute Maximum Ratings (Ta ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ529(L),2SJ529(S) Absolute Maximum Ratings (Ta ...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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For 0.3-16v Found Datasheets File :: 13084    Search Time::2.36ms    
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