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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
2N6428A
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| OCR Text |
...
Conditions
IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 30V, IE = 0 VBE = 5V, IC = 0 VCE = 5V, IC = 0.01ma VCE = 5V, IC = 0.1mA VCE = 5V, IC = 1.0mA VCE = 5V, IC = 10mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5... |
| Description |
NPN Epitaxial Silicon Transistor
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| File Size |
52.34K /
3 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC5646
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| OCR Text |
...in flat leadless package (1.4mm!0.8mm!0.6mm).
0.3
0.25
0.1
3
0.8
0.2
0.3
1 0.45
2
1.4
Specifications
Absolute ...01mA
0 0
IB=0
1 2 3 4 5 IT02260
0 1.0 1.2 IT02261
Collector-to-Emitter Voltage, VCE -- ... |
| Description |
UHF to S Band Low-Noise Amplifier andOSC Applications
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| File Size |
31.70K /
6 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SC5647
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| OCR Text |
... typ (f=2GHz).
3
[2SC5647]
0.3 0.75 0.6
0.4 0.8 0.4 1.6
0 to 0.1
1
2 0.5 0.5 1.6
0.2
0.1
1 : Base 2 : Emitter 3 : ...01mA
IB=0
0 1.0 2.0 3.0 4.0 5.0 IT05344
0
0 1.0 1.2 IT05345
Collector-to-Emitter Voltage,... |
| Description |
UHF to S Band Low-Noise Amplifier and OSC Applications
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| File Size |
36.42K /
7 Page |
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it Online |
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Hi-Sincerity Microelectronics HSMC[Hi-Sincerity Mocroelectronics]
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| Part No. |
HMBT6429
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| OCR Text |
...0 100 10 200 600 660 1250 700 3.0 Unit V V nA nA nA mV mV mV Test Conditions IC=100uA IC=1mA VCB=30V VCE=30V VEB=5V IC=10mA, IB=0.5mA IC=100mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=0.01ma VCE=5V, IC=0.1mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, ... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
28.11K /
3 Page |
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INTEGRAL[Integral Corp.]
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| Part No. |
IL8560
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| OCR Text |
...rs" and "Minutes" are reset to (0:00) (24hour basis) or (12:00) (12hour basis). "Hours" are incremented +1 immediately and advance at a 2Hz ...01mA IOL=0,02mA UTEST=12V UTEST=12V -55% UTEST=12V Min -15% -15% -15% VDD+20,2 V VDD+20,2 VDD+20,2 1... |
| Description |
CLOCK CIRCUIT
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| File Size |
218.04K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MPSA12_02 MPSA12 MPSA1202
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| OCR Text |
... Test Condition IC = 100A, IE = 0 VCB = 15V, IE = 0 VCB = 15V, IC = 0 VEB = 10V, IC = 0 VCE = 5.0V, IC = 10mA IC = 10mA, IB = 0.01ma IC = 10mA, VCE = 5.0V 20,000 1.0 1.4 V V Min. 20 100 100 100 Typ. Max. Units V nA nA nA Collector-Emitter B... |
| Description |
NPN Darlington Transistor
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| File Size |
23.80K /
3 Page |
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ZETEX[Zetex Semiconductors]
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| Part No. |
MPSA12P
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| OCR Text |
...NIT V CONDITIONS. I C=100A, I B=0* V CE=15V, V BE=0
I CES
100
nA
I CBO
100
nA
VCB=15V, I E=0
Emitter Cut-Off Current...01mA
V BE(on)
1.4
V
I C=10mA, V CE=5V*
Static Forward Current h FE Transfer Ratio
... |
| Description |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
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| File Size |
35.31K /
1 Page |
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Sharp Electrionic Compo... SHARP[Sharp Electrionic Components]
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| Part No. |
PT4120
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| OCR Text |
0.94 mm) 2. Compact, thin and flat package
Side View and Thin Flat Type 2-Phase Output Phototransistor
s Outline Dimensions
Gate burr
...01mA Ee = 0 MIN. 0.45 35 6 VCE = 2V,IC = 2mA RL = 100 IC(a)/IC(b) 0.7 TYP. 0.1 800 3.0 3.5 MAX. 1.8 ... |
| Description |
Side View and Thin Flat Type 2-Phase Output Phototransistor
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| File Size |
49.30K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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