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TOSHIBA
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| Part No. |
1SS308
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| OCR Text |
...capacitance : SC-74A : VF (3) = 0.92V (typ.) : CT = 2.2pF (typ.) Unit: mm
l Fast reverse recovery time : trr = 1.6ns (typ.)
Maximum Ratings (Ta = 25C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forwa... |
| Description |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
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| File Size |
124.89K /
4 Page |
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TOSHIBA
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| Part No. |
1SS322
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| OCR Text |
...rent l Small package : VF (3) = 0.54V (typ.) : IR = 5A (max) : SC-70
Maximum Ratings (Ta = 25C)
Characteristic Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation Junct... |
| Description |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
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| File Size |
123.01K /
4 Page |
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it Online |
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TOSHIBA
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| Part No. |
1SV308
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| OCR Text |
...) Small total capacitance: CT = 0.3 pF (typ.) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 125 -55~125 Unit V mA C C... |
| Description |
Diode Silicon Epitaxial Pin Type VHF Tuner Band Switch Applications
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| File Size |
101.67K /
4 Page |
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it Online |
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SONY
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| Part No. |
1T363A
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| OCR Text |
...package * Low series resistance 0.8 Max. (f=470 MHz) * Large capacitance ratio 15 Typ. (C1/C28) * Small leakage current 10 nA Max. (VR=28 V) * Capacitance deviation within 2 % Applications Electronic tuning of TV and CATV Structure Silicon... |
| Description |
Silicon Variable Capacitance Diode
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| File Size |
62.30K /
6 Page |
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it Online |
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SONY
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| Part No. |
1T363
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| OCR Text |
...package * Low series resistance 0.80 Max. (f=470 MHz) * Large capacitance ratio 15 Typ. (C1/C28) * Small leakage current 10 nA Max. (VR=28 V) * Maximum capacitance deviation 3% Max. Applications Electronic tuning for TV, CATV Structure Sil... |
| Description |
Silicon Variable Capacitance Diode
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| File Size |
50.42K /
5 Page |
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SONY
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| Part No. |
1T365
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| OCR Text |
...ure package * Small capacitance 0.7 pF Typ. (VR=25 V) * Low leakage current 10 nA Max. (VR=28 V) * Small serial resistance 1.1 Typ. (VR=1 V, f=470 MHz) Structure Silicon epitaxial planar type diode M-235
Absolute Maximum Ratings (Ta=25 ... |
| Description |
Silicon Variable Capacitance Diode
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| File Size |
52.46K /
5 Page |
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it Online |
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SONY
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| Part No. |
1T367
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| OCR Text |
...ge * Small series resistance rs=0.3 (Typ.) Applications * UHF band VCO * Local oscillator for telephone * Local oscillator for cellular systems Structure Silicon epitaxial planar type diode Absolute Maximum Ratings (Ta=25 C) * Reverse volt... |
| Description |
UHF band VCO
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| File Size |
49.62K /
5 Page |
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SONY
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| Part No. |
1T368A
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| OCR Text |
...ackage * Low series resistance: 0.75 Max. (f = 470MHz) * Large capacitance ratio: 11.5 Typ. (C2/C25) * Small leakage current: 10nA Max. (VR = 28V) * Capacitance deviation in a matching group: within 2% Applications Electronic tuning of wide... |
| Description |
Variable Capacitance Diode
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| File Size |
45.72K /
5 Page |
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it Online |
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Price and Availability
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