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DIODES[Diodes Incorporated]
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| Part No. |
2N7002T
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| OCR Text |
...ition VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10...3 0.2 0.1
VGS = 5, 6, 7, 10V
VGS = 10,7,6V
VGS = 4V
2.2
RDS(ON), NORMALIZED DRAIN-SOURCE ... |
| Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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| File Size |
83.69K /
3 Page |
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Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD2137A 2SB1417 2SB1417A 2SD2137
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| OCR Text |
...T ton tstg tf Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0 VCE = -30V, IB = 0 VCE = -60V, IB = 0 VEB = -6V, IC = 0 IC = -30mA, IB = 0 ...3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min typ max -100 -100 -100 -100 -100 Unit A A A ... |
| Description |
Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR
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| File Size |
53.34K /
3 Page |
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Sanyo Semicon Device Toshiba Semiconductor
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| Part No. |
2SJ339
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| OCR Text |
...-1mA, VGS=0 IG=100A, VDS=0 VDS=-60V, VGS=0 VGS=16V, VDS=0 VDS=-10V, ID=-1mA VDS=-10V, ID=-15A ID=-15A, VGS=-10V ID=-15A, VGS=-4V -1.0 15 25 ...3 --40
--40
Drain Current, ID - A
--3.5V
Drain Current, ID - A
--4.5V
--30
--30... |
| Description |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
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| File Size |
39.40K /
4 Page |
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it Online |
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Price and Availability
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