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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005CSWG
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc = 5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles ... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
417.45K /
21 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM54V32126A-60GS-K
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| OCR Text |
...8 320 10 10 10 12 20 t wpe we pulse width (output disable) ns 12 10 10 14 15 12 13 12 (v cc = 3.3 v 0.3 v, ta = 0c to 70c) note 1, 2, 3
8/26 ? semiconductor msm54v32126a notes: 1. an initial pause of 200 m s is required a... |
| Description |
131,072-Word X 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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| File Size |
304.53K /
26 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM518205-60TS-K MSM518205-80SJ
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| OCR Text |
... we pulse width (dq disable) t wpe ns 10 oe command hold time oe precharge time t och t oep 10 10 10 20 10 15 15 0 40 40 85 55 10 20 10 15 10 45 15 15 0 60 0 0 0 5 10 10 ns ns 10 10 10 20 min. 10 20 20 0 50 50 110 70 10 20 10 15 15 55 20... |
| Description |
4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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| File Size |
652.37K /
18 Page |
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it Online |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM519205-60TS-K MSM519205-70SJ
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| OCR Text |
... we pulse width (dq disable) t wpe ns 10 oe command hold time oe precharge time t och t oep 10 10 10 20 10 15 15 0 40 40 85 55 10 20 10 15 10 45 15 15 0 60 0 0 0 5 10 10 ns ns 10 10 10 20 min. 10 20 20 0 50 50 110 70 10 20 10 15 15 55 20... |
| Description |
4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 4194304字2位动态随机存储器：快速页面模式型与江
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| File Size |
652.10K /
18 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM53216004BV
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles be... |
| Description |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
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| File Size |
387.83K /
20 Page |
View
it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM53232004BV
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| OCR Text |
...t wed 15 15 ns w pulse width t wpe 5 5 ns ac characteristics (0 c t a 70 c, vcc=5.0v 10%. see notes 1,2.) notes an initial pause of 200us is required after power-up followed by any 8 ras -only or cas -before- ras refresh cycles be... |
| Description |
32M x 32 DRAM SIMM(32M x 32 动RAM模块)
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| File Size |
401.25K /
20 Page |
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it Online |
Download Datasheet |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM5117805F-70TS-K MSM5117805F-XXTS-K MSM5117805F-50TS-K MSM5117805F-70JS
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| OCR Text |
... we pulse width (dq disable) t wpe 7 ? 10 ? 10 ? ns oe command hold time t oeh 7 ? 10 ? 13 ? ns oe precharge time t oep 7 ? 10 ? 10 ? ns oe command hold time t och 7 ? 10 ? 10 ? ns write command to ras lead time t rwl 7 ? 10 ? 13 ? ns... |
| Description |
2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO 2097152词位动态随机存储器：快速页面模式型与江
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| File Size |
212.51K /
16 Page |
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it Online |
Download Datasheet |
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OKI SEMICONDUCTOR CO., LTD.
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| Part No. |
MSM51V17805F-70TS-K
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| OCR Text |
...we pulse width (dq disable) t wpe 7 ? 10 ? 10 ? ns oe command hold time t oeh 7 ? 10 ? 13 ? ns oe precharge time t oep 7 ? 10 ? 10 ? ns oe command hold time t och 7 ? 10 ? 10 ? ns write comman... |
| Description |
2,097,152-Word 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
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| File Size |
231.56K /
17 Page |
View
it Online |
Download Datasheet |
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