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FUJI[Fuji Electric]
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| Part No. |
2SK3593-01
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| OCR Text |
...t *3 5 W Max. power dissipation PD Ta=25C 2.4 ** Tc=25C 270 C Operating and storage Tch +150 -55 to +150 C temperature range Tstg ** Surface...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
300
5
Allowa... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
101.84K /
4 Page |
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it Online |
Download Datasheet
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FUJI[Fuji Electric]
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| Part No. |
2SK2528-01
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| OCR Text |
...ol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 900 900 5 20 30 80 150 -55 ~ +150 Unit V V A A V W C C
> Equivalent Circuit
- Ele...01
FAP-II Series
Drain-Source On-State Resistance
RDS(on) = f(Tch); ID=2,5A; VGS=10V
5A
80W... |
| Description |
N-channel MOS-FET
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| File Size |
154.70K /
2 Page |
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it Online |
Download Datasheet |
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FUJI[Fuji Electric]
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| Part No. |
2SK3680-01
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| OCR Text |
...30 IAS 52 IAR EAS dVDS/dt dV/dt PD 26 802.7 20 5 2.50 600 +150 -55 to +150 Unit V V A A V A Remarks VGS=-30V
Operating and storage Tch te...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
800
FUJI POWER MOSFET
Typical Outpu... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
109.36K /
4 Page |
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it Online |
Download Datasheet |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SK3685-01
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| OCR Text |
...VGS 30 IAS 19 EAS dVDS/dt dV/dt PD Tch Tstg 245.3 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Remarks VGS=-30V
Tch...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
400
50
FUJI POWER MOSFET
Typical O... |
| Description |
POWER MOSFET N-CHANNEL SILICON POWER MOSFET
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| File Size |
105.22K /
4 Page |
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it Online |
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FUJI ELECTRIC CO LTD
FUJI[Fuji Electric]
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| Part No. |
2SK3698-01
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| OCR Text |
... 171.1 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.02 Tc=25C 120 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/s kV/s W
Equivalent circuit sc...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
150
5
Typica... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
100.56K /
4 Page |
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it Online |
Download Datasheet |
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FUJI[Fuji Electric]
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| Part No. |
2SK3727-01
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| OCR Text |
... 127.2 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25C 2.02 Tc=25C 75 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/s kV/s W C C
Equivalent circuit...01
Characteristics
Allowable Power Dissipation PD=f(Tc)
2.5 80 2.0 60
FUJI POWER MOSFET
100... |
| Description |
N-CHANNEL SILICON POWER MOSFET
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| File Size |
98.79K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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