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  package caseo Datasheet PDF File

For package caseo Found Datasheets File :: 136    Search Time::1.969ms    
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    MGP7N60E-D

ON Semiconductor
Part No. MGP7N60E-D
OCR Text ...vice. ? industry standard to220 package ? high speed: e off = 70 j/a typical at 125 c ? high voltage short circuit capability 10 s ...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 106.31K  /  6 Page

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    MTB4N80E-D

ON Semiconductor
Part No. MTB4N80E-D
OCR Text ...ntmode silicon gate the d 2 pak package has the capability of housing a larger die than any existing surface mount package which allows it t...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the ...
Description TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate

File Size 240.50K  /  10 Page

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    Motorola, Inc.
Part No. MTDF1P02HD
OCR Text ... miniature micro8 surface mount package e saves board space ? extremely low profile (<1.1 mm) for thin applications such as pcmcia cards ? u...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM

File Size 235.38K  /  12 Page

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    MGW21N60ED-D

ON Semiconductor
Part No. MGW21N60ED-D
OCR Text ...vice. ? industry standard to247 package ? high speed: e off = 65 j/a typical at 125 c ? high voltage short circuit capability 10 ...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 127.43K  /  6 Page

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    MGW14N60ED-D

ON Semiconductor
Part No. MGW14N60ED-D
OCR Text ...vice. ? industry standard to247 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capability 10 s...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate

File Size 124.38K  /  6 Page

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    MGP7N60ED-D

ON Semiconductor
Part No. MGP7N60ED-D
OCR Text ...vice. ? industry standard to220 package ? high speed: e off = 70 j/a typical at 125 c ? high voltage short circuit capability 10 s ...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 120.86K  /  6 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MPX2102 MPX2102A MPX2102AP MPX2102ASX MPX2102D MPX2102DP MPX2102GP MPX2102GVP
OCR Text ...+85 c ? easytouse chip carrier package options ? available in absolute, differential and gauge con- figurations ? ratiometric to supply vol...caseo linearity error (lower numerical value), the calculations required are burdensome. conversely,...
Description 100kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(100kPa片内温度补偿和校准硅压力传感

File Size 319.53K  /  12 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MPXM2102 MPXM2102A MPXM2102AS MPXM2102AST1
OCR Text ... 1320a mpak package rev 1 f r e e s c a l e s e m i c o n d u c t o r , i ...caseo linearity error (lower numerical value), the calculations required are burdensome. conversely,...
Description 100kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(100kPa片内温度补偿和校准硅压力传感

File Size 127.51K  /  8 Page

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    MGP4N60ED-D

ON Semiconductor
Part No. MGP4N60ED-D
OCR Text ...vice. ? industry standard to220 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capability 10 s ...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.50K  /  6 Page

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    MGP11N60ED-D

ON Semiconductor
Part No. MGP11N60ED-D
OCR Text ...vice. ? industry standard to220 package ? high speed: e off = 60 j per amp typical at 125 c ? high voltage short circuit capability ...caseo conditions e the designer's data sheet permits the design of most circuits entirely from the i...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate

File Size 122.69K  /  6 Page

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For package caseo Found Datasheets File :: 136    Search Time::1.969ms    
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