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ML9XX IM841B SC800010 53CF92 TFL0816 NTE2524 PJLCDA15 15081
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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ...5 1 m s = 10 DC (1 m Op sh s ot) er at Operation in ion this area is limited by R DS(on) PW Ta = 25 C 0 50 100 150 Ta (C) 200 Ambient Temperature -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ...10 s = DC (1 10 m Op sh s er ot) Operation in at ion this area is limited by R DS(on) PW 0 m s Ta = 25 C 0 50 100 150 Tc (C) 200 Case Temperature -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ527 2SJ527L 2SJ527S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ527 2SJ527L 2SJ527S
OCR Text ...DS (V) pe s (1 ra sh (T tion ot) c= Operation in 25 this area is C limited by R DS(on) ) O 10 m -10 V -5 -8 V I D (A) -4 Typical Output Characteristics -5 V -6 V -5 -4 V (A) Pulse Test -3.5 V -4 Typical Transfer Charact...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 53.03K  /  9 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...0.03 -0.01 Op m (1 s ot) s sh er 20 ati on Operation in this area is limited by R DS(on) (T c= 25 *C ) 10 Ta = 25 C 0 50 100 Case Temperature 150 Tc (C) 200 -0.1 -0.3 -1 -3 -...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ529 2SJ529L 2SJ529S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ529 2SJ529L 2SJ529S
OCR Text ... (1 n (T sh c= ot ) 10 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature -0.2 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -10...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 51.89K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...u lse PDM PW T 0.03 1 ot sh D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Waveform Vin Monitor D.U.T. RL Vout Monitor Vin 10% 90% Vin 50 -10 V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ... R DS(on) ion (1 (T ot ) ) 25 C 0 50 100 150 Tc (C) 200 Case Temperature 0.1 Ta = 25 C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) -20 Typical Output Characteristics -10 V -6 V -4 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...s limited by R DS(on) ion ot) c= 25 C ) 0 50 100 150 Tc (C) 200 Case Temperature Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -50 -10 V...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...Ta = 25 C ion sh (T ot) c= 25 C ) -0.1 0 50 100 150 Tc (C) 200 Case Temperature -0.1 -1 -10 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics -50 -8 V -3.5 V Pulse Test -...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text ... m 0 s s 10 sh ot ) (T Operation in c= 25 this area is C ) limited by R DS(on) at ion (1 0 50 100 150 Tc (C) 200 Case Temperature 0.1 Ta = 25 C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V)...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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