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  isd-74 Datasheet PDF File

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    IRFIBC40G SIHFIBC40G SIHFIBC40G-E3 IRFIBC40GPBF

Vishay Siliconix
Part No. IRFIBC40G SIHFIBC40G SIHFIBC40G-E3 IRFIBC40GPBF
OCR Text ..., IAS = 3.5 A (see fig. 12). c. ISD 6.2 A, dI/dt 80 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91182 S-81273-Rev. A, 16-Jun-08 www.vishay.com 1...
Description Power MOSFET

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    STP140NF75 STB140NF75-1 STB140NF75 STB140NF75T4 -STB140NF75

STMicroelectronics
ST Microelectronics
Part No. STP140NF75 STB140NF75-1 STB140NF75 STB140NF75T4 -STB140NF75
OCR Text ... V A A A W W/C V/ns mJ C (1) ISD 120A, di/dt 400A/s, VDD V (BR)DSS, T j TJMAX (2) Starting T j = 25 oC, ID = 60 A, VDD = 30V Decembe...74 * 10-2 8.86 * 10-2 8.27 * 10-1 RTHERM1 RTHERM2 RTHERM3 RTHERM4 RTHERM5 RTHERM6 7-6 6-5 5-4 ...
Description N-CHANNEL 75V - 0.0065 ohm -120A D??AK/I??AK/TO-220 STripFET??II POWER MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 75V - 0.0065OHM -120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 75V - 0.0065OHM -120A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET

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    STP16NS25 STP16NS25FP

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP16NS25 STP16NS25FP
OCR Text ...ion Temperature -65 to 150 (1) ISD 16A, di/dt300 A/s, VDD V(BR)DSS , TjTjMAX (*) Limited only by maximum temperature allowed Value STP16...74 Max. Unit S pF pF pF 2/9 STP16NS25 - STP16NS25FP ELECTRICAL CHARACTERISTICS (CONTINUED) SW...
Description N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY⑩ MOSFET

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    STP62NS04Z06 STP62NS04Z P62NS04Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STP62NS04Z06 STP62NS04Z P62NS04Z
OCR Text ...mited by safe operating area 2. ISD 40A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX 3. Starting TJ = 25 oC, ID = 20A, VDD = 20V Table 2. Symbol RthJC RthJA Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance ...
Description N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET

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    IRFBC30A IRFBC30APBF

Vishay Siliconix
Part No. IRFBC30A IRFBC30APBF
OCR Text ..., IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 170 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91108 S-81243-Rev. A, 21-Jul-08 www.vishay.com ...
Description Power MOSFET

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    IRFBC30AL IRFBC30ALPBF IRFBC30AS IRFBC30ASPBF IRFBC30ASTRL IRFBC30ASTRLPBF IRFBC30ASTRR IRFBC30ASTRRPBF SIHFBC30ASTR-E3

Vishay Siliconix
Part No. IRFBC30AL IRFBC30ALPBF IRFBC30AS IRFBC30ASPBF IRFBC30ASTRL IRFBC30ASTRLPBF IRFBC30ASTRR IRFBC30ASTRRPBF SIHFBC30ASTR-E3 SIHFBC30ASTL-E3 SIHFBC30AS-E3 SIHFBC30AL-E3 SIHFBC30AS SIHFBC30ASTL SIHFBC30ASTR
OCR Text ..., IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 170 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. Uses IRFBC30A/SiHFBC30A data and te...74 7.0 - 55 to + 150 300d W/C mJ A mJ W V/ns C A UNIT V IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC3...
Description Power MOSFET

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    2N700007 2N7000 2N7002

STMicroelectronics
Part No. 2N700007 2N7000 2N7002
OCR Text ...acteristics Table 6. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current...74.82 23.63 114.17 37.41 TYP. MAX. 44.12 3.94 40.17 19.69 7.88 119.72 103.96 55.13 mils D e ...
Description N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET?/a> Power MOSFET
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET
N-channel 60V - 1.8ヘ - 0.35A - SOT23-3L / TO-92 STripFET⑩ Power MOSFET

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    STD1NK6008 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 STD1NK60 STD1NK60-1 STD1NK60T4

STMicroelectronics
Part No. STD1NK6008 STQ1HNK60R STQ1HNK60R-AP STN1HNK60 STD1NK60 STD1NK60-1 STD1NK60T4
OCR Text ...ited by safe operating area (1) ISD 1.0A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX. Table 4: Thermal Data DPAK/IPAK Rthj-case Rthj-amb Rth...74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W...
Description N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
N-CHANNEL 600V - 8惟 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
N-CHANNEL 600V - 8ヘ - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET

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    STK32N4LLH5

STMicroelectronics
http://
Part No. STK32N4LLH5
OCR Text ...ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on...74 5.01 4.75 0.23 0.45 0.31 0.45 4.22 1.08 1.37 0.24 4.30 3.43 0.22 0.05 0.15 3.48 0.56 1.20 3.90 0....
Description N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK? STripFET V Power MOSFET
N-channel 40 V, 0.0017 ヘ, 32 A, PolarPAK㈢ STripFET⑩ V Power MOSFET
N-channel 40 V, 0.0017 Ω, 32 A, PolarPAK? STripFET?/a> V Power MOSFET

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    SIHL630-E3 IRL630 SIHL630 IRL630PBF

Vishay Siliconix
Part No. SIHL630-E3 IRL630 SIHL630 IRL630PBF
OCR Text ..., IAS = 9.0 A (see fig. 12). c. ISD 9.0 A, dV/dt 120 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91303 S-Pending-Rev. A, 17-Jul-08 www.vishay.co...
Description Power MOSFET

File Size 1,919.39K  /  8 Page

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