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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...emperature. ( See fig. 11 ) isd 12A, di/dt 140A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 4.9mH RG = 25 , IAS = 12A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com APPROVED 1000 VGS 15V...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ... IAS = 22A. (See Figure 12) isd 22A, di/dt 820A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended soldering techniques refer to application note #AN-994. IRF3415S/L 1000 VGS 1...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...emperature. ( See fig. 11 ) isd 22A, di/dt 820A/s, VDD V(BR)DSS, TJ 175C VDD = 25V, starting TJ = 25C, L = 2.4mH RG = 25, IAS = 22A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF3415 1000 VGS 15V 10V 8.0V 7.0...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF3515L IRF3515S

IRF[International Rectifier]
Part No. IRF3515L IRF3515S
OCR Text ...THIS AREA LIMITED BY RDS(on) isd , Reverse Drain Current (A) I D , Drain Current (A) 100 TJ = 175 C 100 10us 10 100us TJ = 25 C 1 10 1ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 1 1 TC = 25 C TJ =...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A)
Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)

File Size 122.87K  /  10 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STL80N4LLF3 L80N4LLF3
OCR Text ...ns ns ns ns Table 6. Symbol isd isdM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current isd = 20 A, VGS = 0 ...
Description N-channel 40V - 0.0042ohm - 80A - PowerFLAT (6x5) STripFET Power MOSFET for DC-DC conversion

File Size 322.15K  /  12 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...rce Voltage 1000 10000 isd , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 175 C I D , Drain Current (A) 100 1000 10us 10 TJ = 25 C 1 100us 100 1ms 0.1 0.0 ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

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    ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
Part No. STL5NK65Z L5NK65Z
OCR Text ... limited by safe operating area isd<4.2A, di/dt<300A/s, VDD<V(BR)DSS , TJ<TJMAX AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche En...
Description N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 650V 1.5 OHM 4.2A POWERFLAT ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLAT⑩ Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 650V - 1.5ohm - 4.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET N沟道650V - 1.5ohm - 4.2A的PowerFLAT⑩齐保护SuperMESH⑩功率MOSFET

File Size 118.77K  /  6 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...urce Voltage 1000 1000 isd , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 100 TJ = 175 C I D , Drain Current (A) 100 100us 10 1ms 10 10ms TJ = 25 C 1 0.1 0.2 V GS = 0 V ...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STL50NH3LL_0609 STL50NH3LL
OCR Text ...ns ns ns ns Table 7. Symbol isd isdM(1) VSD(2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current IS...
Description N-channel 30V - 0.011ohm - 13A - PowerFLAT (6x5) Ultra low gate charge STripFET Power MOSFET

File Size 323.60K  /  12 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. STL120NH02V L120NH02V
OCR Text ...acteristics Table 6. Symbol isd isdM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage isd = 28A, VGS = 0 TBD TBD TBD TBD TBD TBD Test conditions...
Description N-channel 20V - 0.0025ohm - 120A - PowerFLAT(6x5) STripFETIII Power MOSFET

File Size 217.23K  /  10 Page

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