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SAMSUNG[Samsung semiconductor]
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| Part No. |
K1S2816BCM-I K1S2816BCM
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| OCR Text |
...B1, Max.) 130A(<40C) K1S2816BCM-I Industrial(-40~85C) 1.7~2.0V 70ns 250A(<85C) 40mA TBD Operating (ICC2, Max.) PKG Type
PIN DESCRIPTION
...Out Previous Data Valid tAA Data Valid
UtRAM
TIMING WAVEFORM OF READ CYCLE(2)(WE=VIH)
tRC Add... |
| Description |
8Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
132.33K /
10 Page |
View
it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S16161CA-I K1S16161CA DSK1S16161CA
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| OCR Text |
...x.) 35mA PKG Type
K1S16161CA-I
Industrial(-40~85C)
2.7~3.1V
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOC...Out Previous Data Valid tAA Data Valid
UtRAM
TIMING WAVEFORM OF READ CYCLE(2)(WE=VIH)
tRC Add... |
| Description |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
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| File Size |
184.67K /
10 Page |
View
it Online |
Download Datasheet
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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| OCR Text |
...x.) 30mA PKG Type
K1S161611A-I
Industrial(-40~85C)
2.7V~3.1V
70ns
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTI...Out Previous Data Valid tAA Data Valid
UtRAM
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
tRC Ad... |
| Description |
1Mx16 bit Uni-Transistor Random Access Memory
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| File Size |
178.10K /
10 Page |
View
it Online |
Download Datasheet
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Omron Electronics, LLC
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| Part No. |
HY5V56BLF-I HY5V56BF-I
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| OCR Text |
I Series
4 Banks x 4M x 16bits Synchronous DRAM
Preliminary DESCRIPTION
The HY5V56B(L)F is a 268,435,456bit CMOS Synchronous DRAM, ideall...OUT F2 F3 SYMBOL CLK CKE TYPE INPUT INPUT DESCRIPTION Clock : The system clock input. All other inpu... |
| Description |
16Mx16|3.3V|8K|H/8/P/S|SDR SDRAM - 256M 16Mx16显示| 3.3 | 8K的| H/8/P/S |特别提款权的SDRAM - 256M
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| File Size |
287.39K /
12 Page |
View
it Online |
Download Datasheet
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Price and Availability
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