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  gold-cap Datasheet PDF File

For gold-cap Found Datasheets File :: 2695    Search Time::4.891ms    
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    PLB16030U

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PLB16030U
OCR Text ...vides high emitter efficiency * Gold metallization realizes very stable characteristics and excellent lifetime * Multicell geometry gives go...cap metal ceramic flange package with base connected to flange. 2 Top view PLB16030U QUICK RE...
Description NPN microwave power transistor

File Size 66.98K  /  12 Page

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    LLE18010X

Philips Semiconductors
Part No. LLE18010X
OCR Text ...vides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell ge...cap metal ceramic flange package, with emitter connected to flange. 2 Top view handbook, 4 columns...
Description NPN microwave power transistor

File Size 73.63K  /  12 Page

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    LLE18040X

NXP Semiconductors
Philips Semiconductors
Part No. LLE18040X
OCR Text ...vides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell ge...cap metal ceramic flange package, with emitter connected to flange. 2 Top view LLE18040X QUIC...
Description NPN microwave power transistor

File Size 77.25K  /  12 Page

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    LLE18100X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE18100X
OCR Text ...vides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell ge...cap metal ceramic flange package, with emitter connected to flange. QUICK REFERENCE DATA Microwav...
Description NPN silicon planar epitaxial microwave power transistor

File Size 55.90K  /  9 Page

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    LLE18150X

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE18150X
OCR Text ...vides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell ge...cap metal ceramic flange package, with emitter connected to flange. WARNING Product and environmenta...
Description NPN silicon planar epitaxial microwave power transistor

File Size 47.76K  /  9 Page

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    LLE18300X LLE18300NBSP LLE18300

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. LLE18300X LLE18300NBSP LLE18300
OCR Text ...vides high emitter efficiency * Gold metallization realizes very good stability of the characteristics and excellent lifetime * Multicell ge...cap metal ceramic flange package, with emitter connected to flange. Fig.1 Simplified outline and ...
Description NPN microwave power transistor

File Size 84.53K  /  12 Page

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    BLF175

Philips Semiconductors
Part No. BLF175
OCR Text ...Withstands full load mismatch * Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-...cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) infor...
Description HF/VHF power MOS transistor

File Size 137.85K  /  18 Page

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    BLW898

Philips Semiconductors
Part No. BLW898
OCR Text ...n optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATION * Common emitter class-A operation in linear t...cap. The transistor delivers a Po sync = 3 W in class-A operation at 860 MHz and a supply voltage of...
Description UHF linear power transistor

File Size 102.33K  /  12 Page

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    M306N0FGTFP M306N0MCT

Tyco Electronics
Part No. M306N0FGTFP M306N0MCT
OCR Text ...l Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability Applications 2N6439 60 W, 225 to 400 MHz CONTROLLED "Q"...Cap RFC1 -- Ferrite Bead Choke, Feroxcube VK200 19/4B B -- Ferroxcube 56-590-65/4B Ferrite Bead T...
Description 60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON
60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON

File Size 134.51K  /  6 Page

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    Philips
Part No. BFQ34 BFQ34/01
OCR Text ...esistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. The device also features high output voltage capabilities. PINNING PIN 1 2 3 4 DESCRIPTION Code: BFQ34/0...
Description NPN 4 GHz wideband transistor

File Size 57.16K  /  10 Page

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