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  ghz-2.655 Datasheet PDF File

For ghz-2.655 Found Datasheets File :: 252    Search Time::2.282ms    
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    hitachi
Part No. 2SC4784
OCR Text GHz Typ. * High gain, low noise figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline 2SC4784 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collecto...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 76.53K  /  11 Page

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    Motorola
Part No. MBC13720
OCR Text ...ier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is external to allow maximum design flexibility. The LNA has two selectable current settings as well as standby mode. The LNA will operate f...
Description The RF Building Block Series SiGe:C Low Noise Amplifier Wite Bypass Switch
From old datasheet system

File Size 387.75K  /  12 Page

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    BLV57

Advanced Semiconductor
ASI
Part No. BLV57
OCR Text ...60 MHz 15 2.5 2.5 8.0 -60 GHz dB dBc VCE = 25 V POUT = 6.0 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to c...
Description NPN SILICON RF POWER TRANSISTOR
From old datasheet system

File Size 14.16K  /  1 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Part No. MAX3271W MAX3271E MAX3271D MAX3271
OCR Text ...430 MAX 1.1 35 3.4 UNITS V mA k GHz mVp-p mAp-p mA nARMS pA/Hz kHz Ap-p VCC = 100mVp-p, f < 2MHz (Note 6) Note 1: Production test at...2: Source capacitance represents the total capacitance at the IN pad during characterization of the ...
Description 3.3V 2.5Gbps Low-Power Transimpedance Amplifier
" 3.3V, 2.5Gbps Low-Power Transimpedance Amplifier"
From old datasheet system
3.3V, 2.5Gbps Low-Power Transimpedance Amplifier 3.3伏,2.5Gbps的低功耗阻放大

File Size 546.14K  /  8 Page

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    EC3H06B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H06B
OCR Text ... Ratings min typ max 1.0 10 180 GHz GHz pF pF dB dB dB dB Unit A A VCB=10V, f=1MHz VCB=10V, f=1MHz VCE=5V, IC=10mA, f=1.5GHz VCE=1V, IC=1...2 hFE -- IC VCE=5V Gain-Bandwidth Product, fT - GHz 3 2 f T -- IC f=1GHz DC Current G...
Description UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications

File Size 43.40K  /  5 Page

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    2SC4926

Hitachi Semiconductor
Part No. 2SC4926
OCR Text GHz Typ * High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4926 Absolute Maximum Ratings (Ta = 25C) Item Collector to base vo...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 46.90K  /  8 Page

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    NEC Corp.
NEC[NEC]
Part No. NE5520279A-T1 NE5520279A
OCR Text ...DDED EFFICIENCY: 45% TYP at 1.8 GHz * SINGLE SUPPLY: 2.8 to 6.0 V A 0.40.15 5.7 MAX. 0.20.1 0.80.15 1.0 MAX. * HIGH LINEAR GAIN: 10 dB TYP @ 1.8 GHz 2 Gate Drain Gate Drain 0.8 MAX. 3.60.2 DESCRIPTION NE...
Description NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

File Size 163.74K  /  7 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text ...ower GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network. NE8500200 is the six-cells recessed gate chip used in `95'...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

File Size 47.52K  /  8 Page

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    NEC[NEC]
Part No. 2SC4569
OCR Text ...gain bandwidty product fT = 5.0 GHz TYP. Cob = 0.9 pF TYP. * Surface mount package EIAJ: SC-59 2.90.2 1.5 0.65 -0.15 +0.1 0.95 0.95 * Low output capacitance 2 Collector to Base Voltage Collector to Emitter Voltage Emit...
Description UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR

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    2SC5179-T1 2SC5179-T2 2SC5179

NEC
Part No. 2SC5179-T1 2SC5179-T2 2SC5179
OCR Text .... @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz * Small Mini-Mold package EIAJ: SC-70 PACKAGE DIMENSIONS (Units: mm) 2.10.1 1.250.1 2.00.2 +0.1 0.3 -0 0.65 ORDERING INFORMATION PART ...
Description NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

File Size 67.97K  /  13 Page

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