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gate-emitter Datasheet PDF File

For gate-emitter Found Datasheets File :: 12236 Search Time::1.938ms
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				INTERSIL[Intersil Corporation]
Part No.	HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text	...DEC TO-220AB EMITTER COLLECTOR GATE Ordering Information PART NUMBER HGTD7N60C3S HGTP7N60C3 PACKAGE TO-252AA TO-220AB BRAND G7N60C COLLECTOR (FLANGE) JEDEC TO-252AA G7N60C3 COLLECTOR (FLANGE) NOTE: When ordering, use the enti...
Description	3.3V 72-mc CPLD 14A, 600V, UFS Series N-Channel IGBTs 14A 600V UFS Series N-Channel IGBTs From old datasheet system
File Size	143.46K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation HARRIS[Harris Corporation] FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
OCR Text	...DEC TO-220AB EMITTER COLLECTOR GATE January 1997 Features * 14A, 600V at TC = 25oC * * * * 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss C...
Description	3.3V 72-mc CPLD 14A 600V UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs 14A/ 600V/ UFS Series N-Channel IGBTs
File Size	153.41K / 6 Page	View it Online	Download Datasheet

				Powerex Power Semicondu...
Part No.	CM100TF-12H
OCR Text	...age (g-e short) v ces 600 volts gate-emitter voltage v ges 20 volts collector current i c 100 amperes peak collector current i cm 200* amperes diode forward current i f 100 amperes diode forward surge current i fm 200* amperes power dissip...
Description	Six-IGBT IGBTMOD 100 Amperes/600 Volts
File Size	65.97K / 4 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTGT30H60T1G
OCR Text	...rent t c = 25c 60 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 90 w rbsoa reverse bias safe operating area t j = 150c 60a @ 550v these devices are sensitive to electrostatic...
Description	Full Bridge
File Size	351.40K / 6 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text	Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is ...Emitter Zener Diodes C MGP7N60ED IGBT & DIODE IN TO-220 7.0 A @ 90C 10 A @ 25C 600 VOLTS SHORT ...
Description	Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system
File Size	140.16K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGP7N60E
OCR Text	Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination...Emitter Zener Diodes MGP7N60E IGBT IN TO-220 9.0 A @ 90C 10 A @ 25C 600 VOLTS SHORT CIRCUIT RATE...
Description	Insulated Gate Bipolar Transistor
File Size	118.28K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTGT300H60G
OCR Text	...ent t c = 25c 500 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 1150 w rbsoa reverse bias safe operating area t j = 150c 600a @ 550v v ces = 600v i c = 300a @ tc = 80c application ?...
Description	Full Bridge
File Size	338.41K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTGT150H60TG
OCR Text	...ent t c = 25c 350 a v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 480 w rbsoa reverse bias safe operating area t j = 150c 300a @ 550v v ces = 600v i c = 150a @ tc = 80c application ? ...
Description	Full Bridge
File Size	419.98K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	GT5J311
OCR Text	gate bipolar transistor silicon n channel igbt gt5j311,gt5j311(sm) high power switching applications motor control applications ...emitter and collector. maximum ratings (ta = 25c) characteristic symbol rating unit collector...
Description	INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
File Size	314.50K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	GT15J331
OCR Text	gate bipolar transistor silicon n channel igbt gt15j331 high power switching applications motor control applications the 4...emitter and collector. maximum ratings (ta 25c) characteristic symbol rating u...
Description	Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
File Size	177.78K / 7 Page	View it Online	Download Datasheet

For gate-emitter Found Datasheets File :: 12236 Search Time::1.938ms
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