gate-collector pdf Datasheet P5 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MAX853 2P15L6 KRA723T AO211 KLLU4000 80200 3329X104 PD104ST1
	Product Description
	Full Text Search

gate-collector Datasheet PDF File

For gate-collector Found Datasheets File :: 14427 Search Time::1.078ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTG20N60C3D
OCR Text	.... . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter ...
Description	3.3V 36-mc CPLD 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	120.19K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	GT60PR21
OCR Text	...ckaging and internal circuit 1: gate 2: collector 3: emitter to-3p(n) 2014-01-07 rev.2.0 gt60pr21 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximu...
Description	IGBT for soft switching applications
File Size	220.19K / 7 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTGLQ200HR120G
OCR Text	...n typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 200 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 160a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) ...
Description	Three Level T-type Inverter
File Size	491.33K / 10 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APTGLQ100A120T3AG
OCR Text	...urrent t c = 25c 375 v ge gate C emitter voltage 20 v p d maximum power dissipation 650 w rbsoa reverse bias safe operating a...collector current v ge = 0v, v ce = 1200v 50 a v ce(sat) collector emitter saturation vo...
Description	Phase Leg
File Size	508.60K / 6 Page	View it Online	Download Datasheet

				Microsemi
Part No.	APT40GLQ120JCU2
OCR Text	...urrent t c = 25c 160 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 312 w rbsoa reverse bias safe...collector current v ge = 0v, v ce = 1200v 25 a v ce(sat) collector emitter saturation vo...
Description	Si IGBT SiC Diode Module
File Size	278.48K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP6016JPE-15
OCR Text	...package name: ldpak(s)-(1) ) 1. gate 2. collector 3. emitter 4. collector 3 e 1 g 2, 4 c absolute maximum ratings (ta = 25 ? c) item symbol value unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges ? ...
Description	600 V - 40 A- N Channel IGBT High Speed Power Switching
File Size	86.36K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRG4MC30F
OCR Text	gate bipolar transistor e c g n-channel features benefits v ces = 600v v ce(on) max =1.7v @v ge = 15v, i c = 15a parameter max. units v ces collector-to-emitter breakdown voltage 600 v i c @ t c = 25c continuous collector current ...
Description	600V DISCRETE Hi-Rel IGBT in a TO-254AA package
File Size	190.18K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MGP20N60U
OCR Text	Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination...Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Co...
Description	Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
File Size	116.62K / 6 Page	View it Online	Download Datasheet

				MOTOROLA INC MOTOROLA[Motorola, Inc]
Part No.	MGW20N60D
OCR Text	Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is ...Collector-Emitter Voltage Collector-Gate Voltage (RGE = 1.0 M) Gate-Emitter Voltage -- Continuous Co...
Description	Insulated Gate Bipolar Transistor with Anti-Parallel Diode
File Size	245.88K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP60F5DPM-15
OCR Text	... = 15 v, ta = 25c) ? trench gate and thin wafer technology ? high speed switching t f = 85 ns typ. (at i c = 30 a, v ce = 400 v, ...collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25 c i c ...
Description	600V - 40A - IGBT High Speed Power Switching
File Size	74.43K / 7 Page	View it Online	Download Datasheet

For gate-collector Found Datasheets File :: 14427 Search Time::1.078ms
Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |