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For drain- Found Datasheets File :: 113776    Search Time::1.797ms    
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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 Package TO-220AB Ordering Code C67078-A5009-A2 Maximum Ratings Parameter drain-source voltag...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    Wolfspeed
Part No. PXAC201202FC-V2
OCR Text ... gain g ps 16 17 ? db drain efficiency h d 43 46 ? % adjacent channel power ratio acpr ? ?29 ?26 dbc -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 30 35 40 45 50 efficiency (%) peak/average ratio, gain (db) average o...
Description High Power RF LDMOS FET 120W, 28V, 1800 - 2200 MHz

File Size 331.96K  /  10 Page

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    Wolfspeed
Part No. PXAC182908FV-V1
OCR Text ... gain g ps 14 15 ? db drain ef?ciency h d 49.5 51 ? % adjancent channel power ratio acpr ? ?27.5 ?25 dbc features ?? broadband internal input and output matching ?? asymmetrical doherty design - main : p 1db = ...
Description High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz

File Size 351.63K  /  9 Page

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    Wolfspeed
Part No. PXAC182002FC-V1
OCR Text ...n g ps 15.5 16.5 ? db drain ef?ciency h d 48.5 51 ? % adjancent channel power ratio acpr ? ?30 ?26 dbc features ?? broadband internal input and output matching ?? asymmetrical doherty design - main: 70 w typ (p...
Description High Power RF LDMOS FET 180W, 28V, 1805 - 1880 MHz

File Size 307.24K  /  8 Page

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    Diodes
Part No. DMP3018SFK
OCR Text ...ce pin 3 = gate pin 4, 5, 6 = drain pin 1 esd protected e4 dmp3018sfk document number: ds37604 rev. 2 - 2 2 of 6 www.diodes.com january 2015 ? diodes incorporated dmp3018sfk advance information advanced information m...
Description P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 331.33K  /  6 Page

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    DS1312 DS1312E

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1312 DS1312E
OCR Text ... - Battery Warning Output (Open Drain) - Reset Output (Open Drain) - Ground - No Connection DESCRIPTION The DS1312 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application problem of converting CMOS RAM...
Description Nonvolatile Controller with Lithium Battery Monitor

File Size 201.35K  /  11 Page

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    DS1314

MAXIM - Dallas Semiconductor
Dallas Semiconducotr
Part No. DS1314
OCR Text ... - Battery Warning Output (Open Drain) - Reset Output (Open Drain) - Ground - No Connection DESCRIPTION The DS1314 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application problem of converting CMOS RAM...
Description 3V Nonvolatile Controller with Lithium Battery Monitor

File Size 199.72K  /  11 Page

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    Nexperia
Part No. BUK9M6R7-40H
OCR Text ...onditions min typ max unit v ds drain-source voltage 25 c t j 175 c - - 40 v i d drain current v gs = 10 v; t mb = 25 c; fig. 2 [1] - - 50 a p tot total power dissipation t mb = 25 c; fig. 1 - - 65 w static characteristics r dson ...
Description N-channel 40 V, 6.7 mlogic level MOSFET in LFPAK33

File Size 267.77K  /  11 Page

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    NTLJD2105L

ON Semiconductor
Part No. NTLJD2105L
OCR Text ...dfn 2x2 mm package with exposed drain pads offers excellent thermal performance ? low r ds(on) p?channel load switch with n?channel mosfet for level shift ? n channel operated at 1.5 v gate drive voltage level ? p channel operated at 1.5 v...
Description Power MOSFET, 8 V, 4.3 A, μCool™ High Side Load Switch with Level Shift

File Size 98.35K  /  6 Page

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    FDS6680S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6680S
OCR Text ...atings Symbol VDSS VGSS ID PD drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 20 (Note 1a) Units V V A W 11.5 50 2.5 1.2 1 -55 to +150...
Description 30V N-Channel PowerTrench SyncFET⑩

File Size 220.76K  /  9 Page

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