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United Monolithic Semiconductors GmbH UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2291-99F_00 CHA2291 CHA2291-99F/00
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| OCR Text |
...side of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0...16GHz 20GHz
14GHz 18GHz
-1,2
-1
-0,8
-0,6
-0,4
-0,2
0 Vc (V)
0,2
0,4
... |
| Description |
10-18GHz Low Noise, Variable Gain Amplifier 10 - 18GHz低噪声,可变增益放大
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| File Size |
134.80K /
6 Page |
View
it Online |
Download Datasheet
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United Monolithic Semic...
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| Part No. |
CHA3666 CHA3666-15
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| OCR Text |
...compression 21db gain low dc power consumption vd1 vd 2 rfin rfout p1 ...16ghz ci3 -17ghz ci3 -18ghz ip3 versus output power @configuration p1_p2 groun ded 10 12 14 16... |
| Description |
6-17GHz Low Noise Amplifier
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| File Size |
168.16K /
8 Page |
View
it Online |
Download Datasheet
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UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2266-99F_00 CHA2266
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| OCR Text |
...side of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard GaAs PHE...16GHz
Tamb = 25C,Vd =4 V, IDmax 170mA
Gain / Pout @ 14GHz
40 38 36
Gain Pout
18 16 14 12 10 8... |
| Description |
12.5-17GHz Low-Noise Driver Amplifier
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| File Size |
123.23K /
7 Page |
View
it Online |
Download Datasheet
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United Monolithic Semic...
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| Part No. |
CHA3218-99F-15
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| OCR Text |
...5v v id positive supply dc current 120 ma thes e values are representative of measurements made in test fixture that are made with bonding wires at the rf ports.
2 - 18ghz low noise amplifier cha... |
| Description |
2-18GHz Low Noise Amplifier
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| File Size |
360.40K /
10 Page |
View
it Online |
Download Datasheet
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Price and Availability
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