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  area1.5 Datasheet PDF File

For area1.5 Found Datasheets File :: 66    Search Time::1.157ms    
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    Infineon
Part No. SPB80N03 SPP80N03 P80N03
OCR Text ... min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. 62 tbd tbd SPP80N03 SPB80N03 Unit max. 0.5 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 30 2.1 3 ...
Description SIPMOS Power Transistor
From old datasheet system

File Size 68.78K  /  9 Page

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    TLE6214L04

Infineon Technologies AG
Infineon Technologies A...
Part No. TLE6214L04
OCR Text ...ction - ambient @ 6 cm2 cooling area1 RthJC RthJA 2 105 45 K/W K/W K/W PCB with min footprint PCB with 6 cm copper cooling ar...5.5V ; Tj = - 40 C to + 150 C (unless otherwise specified) 1. Power Supply Supply Voltage Supply Cur...
Description Smart Dual Current Sense Switch

File Size 766.31K  /  22 Page

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    Infineon
Part No. SPB80N03L SPP80N03L P80N03L
OCR Text ... min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. 62 tbd tbd SPP80N03L SPB80N03L Unit max. 0.5 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 30 1.2 ...
Description SIPMOS Power Transistor
From old datasheet system

File Size 88.46K  /  9 Page

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    SPD08N10 SPU08N10

INFINEON[Infineon Technologies AG]
Part No. SPD08N10 SPU08N10
OCR Text ...min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 3.1 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Character...5.4 A 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for...
Description SIPMOS Power Transistor

File Size 120.56K  /  8 Page

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    BSL302SN

Infineon Technologies AG
Part No. BSL302SN
OCR Text ...minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-sour...5 V, I D=5.7 A V GS=10 V, I D=7.1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=7.1 A 30 1.2...
Description OptiMOS2 Small-Signal-Transistor

File Size 177.36K  /  9 Page

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    HM-T433

Hope Microelectronics co., Ltd
Part No. HM-T433
OCR Text ... dBm dBm mA m note1. testing area1.open space2.antenna is above the ground for 2 meters 2. if 5Vpower supplied, even longer distance is p...5/26/2008 HM-T v3.1 HOPE MICROELECTRONICS CO.,LTD Rm B.8/F LiJingGe Emperor Regency 6012 ShenNa...
Description FSK TX MODULE

File Size 123.89K  /  3 Page

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    IPW60R190C6 IPP60R190C6 IPA60R190C6 IPB60R190C6 IPI60R190C6

Infineon Technologies AG
Part No. IPW60R190C6 IPP60R190C6 IPA60R190C6 IPB60R190C6 IPI60R190C6
OCR Text ...on, device on PCB, 6cm2 cooling area1) 260 C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal res...5 Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R190C6 Electrical characteris...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 2,182.23K  /  19 Page

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    INFINEON[Infineon Technologies AG]
Part No. BSP129
OCR Text ...minimal footprint 6 cm2 cooling area1) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-sour...5 4.2 0.36 10 10 20 6.0 S nA mA Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (s...
Description SIPMOS Small-Signal-Transistor

File Size 203.64K  /  9 Page

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    BSP170P Q67041-S4018

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP170P Q67041-S4018
OCR Text ... min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit Static Characteristics Drain- source ...5 335 105 max. 420 135 S pF Unit Semiconductor Group 3 07 / 1998 BSP 170 P Preliminary ...
Description SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system

File Size 151.13K  /  9 Page

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    IPI60R280C6 IPW60R280C6

Infineon Technologies AG
Part No. IPI60R280C6 IPW60R280C6
OCR Text ...on, device on PCB, 6cm2 cooling area1) C reflow MSL1 Unit Note / Test Condition Thermal resistance, junction - case RthJC Thermal resista...5 Rev. 2.1, 2010-02-09 600V CoolMOSTM C6 Power Transistor IPx60R280C6 Electrical characteris...
Description Metal Oxide Semiconductor Field Effect Transistor

File Size 2,363.29K  /  19 Page

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For area1.5 Found Datasheets File :: 66    Search Time::1.157ms    
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