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IRF[International Rectifier]
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| Part No. |
IRFU3911PBF IRFR3911PBF
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| OCR Text |
...DS = 100V, VGS = 0V A 250 VDS = 80v, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)...4a 32 ID = 8.4a 6.5 nC VDS = 80v 9.9 VGS = 10V --- VDD = 500V --- ID = 8.4a ns --- RG = 22 --- VGS ... |
| Description |
SMPS MOSFET
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| File Size |
218.53K /
10 Page |
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Zetex Semiconductor PLC
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| Part No. |
ZXTP2012ASTZ
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| OCR Text |
...i cbo 1-20 -0.5 na a v cb =-80v v cb =-80v, t amb =100 c collector cut-off current i cer r 1k 1-20 -0.5 na a v cb =-80v v cb =...4a, i b =-400ma* base-emitter saturation voltage v be(sat) -960 -1060 mv i c =-4a, i b =-400ma* base... |
| Description |
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 3500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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| File Size |
111.94K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHNJ8130 IRHNJ3130 IRHNJ4130 IRHNJ7130
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| OCR Text |
...0mA VDS > 15V, IDS = 9.1A VDS= 80v, VGS=0V VDS = 80v, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 14.4a VDS = 50V VDD = 50V, ID = 14.4a, RG = 7.5
V S( ) A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-... |
| Description |
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
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| File Size |
108.38K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRS9130R FN3240 FRS9130D FRS9130H
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| OCR Text |
...20V VDS = -100V, VGS = 0 VDS = -80v, VGS = 0 VDS = -80v, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 6A VGS = -10V, ID = 4a VDD = -50V, ID = 6A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN -100 -2.0 1 16 33... |
| Description |
6A/ -100V/ 0.565 Ohm/ Rad Hard/ P-Channel Power MOSFETs 6A, -100V, 0.565 Ohm, Rad Hard, P-Channel Power MOSFETs From old datasheet system
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| File Size |
48.59K /
6 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
FRM9130R FN3262 M9130 FRM9130D FRM9130H
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| OCR Text |
...20V VDS = -100V, VGS = 0 VDS = -80v, VGS = 0 VDS = -80v, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 6A VGS = -10V, ID = 4a VDD = -50V, ID = 6A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN -100 -2.0 1 16 33... |
| Description |
6A / -100V / 0.550 Ohm / Rad Hard / P-Channel Power MOSFETs From old datasheet system 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs 6A/ -100V/ 0.550 Ohm/ Rad Hard/ P-Channel Power MOSFETs
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| File Size |
56.90K /
6 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE244 NTE243
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| OCR Text |
...Sustaining Voltage: VCEO(sus) = 80v Min @ 100mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 4a = 3V Max @ IC = 8A D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Collec... |
| Description |
Silicon Complementary Transistors Darlington Power Amplifier
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| File Size |
25.76K /
2 Page |
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it Online |
Download Datasheet
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