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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW25N120
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| OCR Text |
...uency (Tj 150C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
350W 300W 250W 200W 150W 100W 50W 0W 25C
60A
50A
IC, COLLECTOR CURRENT
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| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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| File Size |
333.32K /
13 Page |
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it Online |
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM75TF-28H
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| OCR Text |
...rge Diode Forward Voltage VCC = 800V, IC = 75A, VGS = 15V IE = 75A, VGS = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts
** Pulse width and repetition rate should ... |
| Description |
Six-IGBT IGBTMOD 75 Amperes/1400 Volts 75 A, 1400 V, N-CHANNEL IGBT
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| File Size |
57.25K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM75TF-28H
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| OCR Text |
...Emitter-Collector Voltage VCC = 800V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts
** Pulse width and repetition rate should ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
52.39K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HA-28H
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| OCR Text |
...rge Diode Forward Voltage VCC = 800V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.0 3.1 2.95 3060 - Max. 2.0 0.5 8.0 4.2** - - 3.8 Units mA
A
Volts Volts Volts nC Volts
** Pulse width and repetition rate ... |
| Description |
Single IGBTMOD 600 Amperes/1400 Volts
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| File Size |
54.24K /
4 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
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| Part No. |
CM600HA-28H
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| OCR Text |
...Emitter-Collector Voltage VCC = 800V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.0 3.1 2.95 3060 - Max. 2.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts
** Pulse width and repetition rate shou... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
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| File Size |
48.90K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM50DY-28H
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| OCR Text |
...rge Diode Forward Voltage VCC = 800V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 255 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA
A
Volts Volts Volts nC Volts
** Pulse width and repetition rate sho... |
| Description |
Dual IGBTMOD 50 Amperes/1400 Volts
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| File Size |
57.37K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM400HA-28H
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| OCR Text |
... = 400A, diE/dt = -800A/s VCC = 800V, IC = 400A, VGE1 = VGE2 = 15V, RG = 0.78 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 4.0 Max. 80 28 16 300 500 350 500 300 - Units nF nF nF ns ns ns ns ns
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| Description |
Single IGBTMOD 400 Amperes/1400 Volts
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| File Size |
55.96K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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