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  7mh Datasheet PDF File

For 7mh Found Datasheets File :: 470    Search Time::1.563ms    
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    NJU6343

New Japan Radio
Part No. NJU6343
OCR Text ... =3.3V, f0=20MHz, R1=16.9, L1=4.7mh, C1=13.6fF, C0=3.1pF, =227) 150 100 f/f0 [ppm] 50 0 -50 -100 -150 -200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VC [V] (2)Frequency Pulling Range 2 (VDD =3.3V, f0=21MHz, R1=13.1, L1=7.4mH, C1=7.8fF, C0=1.8pF, ...
Description 50MHz VCXO IC

File Size 71.29K  /  5 Page

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    CS51031YD8 CS51031YDR8 CS51031YN8 CS51031

Cherry Semiconductor Corpor...
CHERRY[Cherry Semiconductor Corporation]
ZF Electronics Corporation
ZF Electronics, Corp.
Part No. CS51031YD8 CS51031YDR8 CS51031YN8 CS51031
OCR Text ... 10W CVCC 100mF CS 0.1mF D1 L 4.7mh PGnd COSC Gnd CS51031 COSC COSC 150pF Gnd VCC VFB 100 .01mF RB 2.5kW VO 3.3V @ 3A RA 1.5kW CRR 0.1mF CO 100mF 2 Cherry Semiconductor Corporation 2000 South County Trail,...
Description Fast PFET Buck Controller Does Not Require Compensation 快速PFET的降压控制器不要求补

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    IRLI520 IRLI520N

IRF[International Rectifier]
Part No. IRLI520 IRLI520N
OCR Text ... 11 ) Starting TJ = 25C, L = 4.7mh RG = 25, IAS = 6.0A. (See Figure 12) ISD 6.0A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRL520N data and test conditions
Description Power MOSFET

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    IRF240

Intersil Corporation
Part No. IRF240
OCR Text ... 50V, starting TJ = 25oC, L = 2.7mh, RG = 25, peak IAS = 9A. See Figures 15 and 16. Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 20 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 16 ...
Description 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET
18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

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    Fairchild
Part No. KA5Q1265RF
OCR Text ...mum junction temperature 3. L = 7mh, VDD = 50V, RG = 25, starting Tj = 25C 4. L = 13uH, starting Tj = 25C 2 KA5Q1265RFH Electrical Characteristics (SFET Part) (Ta=25C unless otherwise specified) Parameter Drain-Source Breakdown Vo...
Description IC,SMPS CONTROLLER,CURRENT-MODE,BCDMOS,ZIP,5PIN,PLASTIC

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    STV9380A

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STV9380A
OCR Text ...e characteristics: R = 5.5, L = 7mh fVERT = 50 Hz 3/10 Absolute Maximum Ratings Figure 2: Thermal Resistance with "On-board" Square Heatsink vs. Copper Area STV9380A RthJA (C/W) Copper Area 35 m Thickness 70 60 PC Boar...
Description Class-D Vertical Deflection Amplifier for 2.5 Amp TV and Monitor Applications

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    IRF7F3704

International Rectifier
Part No. IRF7F3704
OCR Text ...= 15 V, Starting TJ = 25C, L= 2.7mh Peak IAS =12A, VGS = 10V, RG= 25 ISD 12A, di/dt 80A/s, Pulse width 300 s; Duty Cycle 2% VDD 20V, TJ 150C Case Outline and Dimensions -- TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE...
Description THRU-HOLE (TO-39) 20V, N-CHANNEL

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    BUZ101SL-4

http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ101SL-4
OCR Text ...,VDD =25 V RGS =25 , L = 10.7mh 100 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 4 A 16 V EAS 80 70 VGS 12 10 60 50 40 30 4 20 2 10 0 20 0 0 4 8 12 16 20 24 28 nC 34 8 0,2 VDS max 0,8 VDS max 6 40 ...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    Zarlink
Part No. MH89101
OCR Text ... + RXout XFM TXin D3 D1 + 5V D2 7mh D4 10 10% 5.5 mH 1.5 F 5.5 mH Power Feed/Extract 10 10% Note: D1-D4 Schottky Diodes MUR 105 Figure 4 - Typical Connection Diagram 15.24 mm 0.51 mm (0.6" 0.020") 10.67 mm 0.51 mm (0.42"...
Description Passive Line Termination Circuit

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