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STMICROELECTRONICS
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| Part No. |
STW6NC90Z
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| OCR Text |
...ns q g total gate charge v dd = 720v, i d =5a, v gs = 10v 40 56 nc q gs gate-source charge 9 nc q gd gate-drain charge 15 nc symbol parameter test condit ions min. typ. max. unit t r(voff) off-voltage rise time v dd = 720v, i d =5a, r g =4.... |
| Description |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
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| File Size |
89.43K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRG4PH50KD IRG4PH50KD-E
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| OCR Text |
... motor control, tsc =10s, VCC = 720v , TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Tighter parameter distribution and higher efficiency than previous generations * IGBT co-packaged with HEXFREDTM ultraf... |
| Description |
45 A, 1200 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.77V @Vge=15V Ic=24A)
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
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| File Size |
221.27K /
10 Page |
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Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGTG20N120C3D G20N120
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| OCR Text |
...ction temperature. 2. VCE(PK) = 720v, TJ = 125oC, RGE = 3.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC MIN 1200 5.0 ... |
| Description |
45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247
45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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| File Size |
97.30K /
8 Page |
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it Online |
Download Datasheet |
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