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7.9ghz Datasheet PDF File

For 7.9ghz Found Datasheets File :: 771 Search Time::1.937ms
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				SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193W Q62702-F1577
OCR Text	...0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 1...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.05K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFP193 Q62702-F1282 BFP193Q62702-F1282
OCR Text	...0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 IC -1 0 10 0 -7 10 1...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB dB ...
Description	NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers) Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) From old datasheet system
File Size	60.37K / 7 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWL30NPA HWL30NPA-V1-15
OCR Text	...) 30 25 20 15 Gain 10 5 0 1 3 5 7 9 11 13 15 17 19 21 PAE (%) 70 60 50 40 30 20 10 0 Pin (dBm) Po Gain Eff Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw....
Description	L-Band GaAs Power FET
File Size	114.99K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon Technologies AG
Part No.	Q62702-F1382 BFP183
OCR Text	...0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 1...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 dB 10V...
Description	NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) NPN硅射频晶体管（对于低噪声，高增益2毫安0毫安的集电极电流宽带放大器） NPN Silicon RF Transistor (For low noise high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) From old datasheet system
File Size	60.49K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1492 BFR182W
OCR Text	...0.01 0.005 D=0 10 1 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 1...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB 10V...
Description	NPN Silicon RF Transistor (For low noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA) NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA) From old datasheet system
File Size	55.96K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1494 BFR280W
OCR Text	...rrents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 dB...
Description	NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems From old datasheet system
File Size	56.22K / 7 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG
Part No.	BFS482
OCR Text	...r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.0...9ghz v ce = parameter 0 5 10 15 20 25 30 35 ma 45 i c 6 8 10 12 14 16 18 db 22 g 1...
Description	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
File Size	65.87K / 7 Page	View it Online	Download Datasheet

				http:// SIEMENS[Siemens Semiconductor Group]
Part No.	BFR280 Q62702-F1298
OCR Text	...rrents from 0.2mA to 8mA * fT = 7.5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution!...9GHz VCE = Parameter 20 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 13 dB 10V...
Description	From old datasheet system NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) NPN Silicon RF Transistor (For low noise/ low-power amplifiers in mobile communication systems)
File Size	57.01K / 7 Page	View it Online	Download Datasheet

				http:// SIRENZA MICRODEVICES
Part No.	SZP-5026Z SZP-5026Z-EVB1 SZP-5026Z-EVB2
OCR Text	...V Junction-to-Lead 0.8 602 2.7 2.0 100 A C/W Thermal Resistance 14.0 Test Conditions: Z0 =50, VCC =5V, IQ =602mA, TBP =30C ...9GHz 8.8 32.7 25.3 632 10 15 9.0 32.2 25.1 631 13 13 9.4 33.2 25.3 670 19 15 8.8 32.5 25.0 670 19 1...
Description	4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
File Size	394.48K / 14 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG1096FN
OCR Text	...13pF 1nF VDD (RF AMP) 5 21 6 20 7 30pF ANT1 ANT2 10 30pF VCTL1 11 1pF (TX) (POUT) VGG 18nH 1.8nH 25 100nF VDD (IF AMP, MIX) 1nF 26 ...9GHz When ANT1 transmission: VCTL1 = 3V, VCTL2 = 0V When ANT2 transmission: VCTL1 = 0V, VCTL2 = 3V I...
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	120.22K / 7 Page	View it Online	Download Datasheet

For 7.9ghz Found Datasheets File :: 771 Search Time::1.937ms
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