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Intersil, Corp. Intersil Corporation
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| Part No. |
HUF76432P3 FN4673 HUF76432S3S HUF76432S3ST
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| OCR Text |
60v, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
JEDEC TO-263AB
DRAIN...60a VGS = 10V, RGS = 6.8 (Figures 16, 21, 22) VDD = 30V, ID = 37A VGS = 4.5V, RGS = 6.2 (Figures 15,... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 60v V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60v的五(巴西)直|6A条(丁)|63AB Dual Differential Drivers And Receivers 16-TSSOP -40 to 85 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 55A, 60v, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET From old datasheet system
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| File Size |
132.78K /
9 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE6093
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| OCR Text |
.... . . . . . . . . . . . . . . . 60v Working Peak Reverse Voltage, VRWM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....60a Peak Repetitive Forward Current (VR = 60v, Square Wave, TC = +125C), IFM . . . . . . . . . . . .... |
| Description |
Silicon Rectifier Dual, Schottky Barrier Silicon Rectifier Dual Schottky Barrier
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| File Size |
17.28K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP14AN06LA0 FDP14AN06LA FDB14AN06LA0
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| OCR Text |
60v, 60a, 14.6m
Features
* r DS(ON) = 12.8m (Typ.), VGS = 5V, ID = 60a * Qg(tot) = 24nC (Typ.), VGS = 5V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Formerly devel... |
| Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 60v, 61A, 0.014 Ohm, TO-220 Package N-Channel PowerTrench MOSFET, 60v, 60a, 0.0146 Ohms @ VGS = 5V, TO-263/D2PAK Package N-Channel PowerTrench MOSFET 60v/ 60a/ 14.6m N-Channel PowerTrench MOSFET 60v, 60a, 14.6mз
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| File Size |
186.40K /
11 Page |
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MACOM[Tyco Electronics]
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| Part No. |
SMD050
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| OCR Text |
... Voltage / Interrupt Current
60v / 10A 12V / 60a 5V / 125A Marking:
050
Manufacturer's Mark Part Identification
Notes: 1. All metal surfaces are tin plated. 2. Devices cannot be wave soldered. 3. Drawing not to scale.
TABLE I. ... |
| Description |
PolySwitch PTC Devices Poly Switch PTC Devices
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| File Size |
74.81K /
1 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
XN05553 XN5553
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| OCR Text |
..., IB = 0 IE = 10A, IC = 0 VCB = 60v, IE = 0 VCE = 60v, IB = 0 VCE = 10V, IC = 2mA IC = 10mA, IB = 1mA VCE = 10V, IC = 1mA, GV = 80dB Rg = 10...60a 50A 40A 30A 20A
Collector current IC (mA)
400
40
Ta=75C
-25C
40
30
200
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| Description |
Composite Device - Composite Transistors From old datasheet system Silicon NPN epitaxial planer transistor
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| File Size |
79.88K /
3 Page |
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it Online |
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Price and Availability
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