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510 100 1000 Datasheet PDF File

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				Diodes, Inc. Diodes Inc. Rohm DIODES[Diodes Incorporated]
Part No.	UDZ10B UDZ11B UDZ16B UDZ18B UDZ20B UDZ22B UDZ24B UDZ27B UDZ2V0B UDZ2V2B UDZ2V4B UDZ2V7B UDZ30B UDZ33B UDZ36B UDZ39B UDZ3V0B UDZ3V3B UDZ3V6B UDZ3V9B UDZ43B UDZ47B UDZ4V3B UDZ4V7B UDZ51B UDZ56B UDZ5V1B UDZ5V6B UDZ6V2B UDZ6V8B UDZ7V5B UDZ8V2B UDZ9V1B UDZ13B UDZ15B UDZ12B
OCR Text	... 11.220 12.240 13.490 14.980 16.510 18.350 20.390 22.470 24.780 27.530 30.690 33.790 36.870 39.975 44.075 48.175 52.275 57.400 3. Short d...100 150 10 100 1.0 50 0.1 0 0 100 TA, AMBIENT TEMPERATURE, (C) Fig. 1 Power Der...
Description	Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极 20 characters x 2 Lines, 5x7 Dot Matric Character and Cursor SURFACE MOUNT PRECISION ZENER DIODE Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
File Size	86.24K / 4 Page	View it Online	Download Datasheet

				NEC, Corp. NEC[NEC]
Part No.	2SB1572 2SB1572HY
OCR Text	....685 -0.2 -0.3 -0.89 160 45 155 510 35 400 -0.73 -0.4 -0.6 -1.2 - V V V V MHz pF ns ns ns Base to Emitter Voltage Note Note Note ...100 to 200 HY 160 to 320 HZ 200 to 400 The information in this document is subject to change with...
Description	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 3A I(C) \| TO-243 晶体管\|晶体管\|进步党\| 60V的五（巴西）总裁\| 3A条一（c）\|43 PNP SILICON EPITAXIAL TRANSISTOR
File Size	42.11K / 4 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	AN41204A
OCR Text	... Dissipation 3.0 2.5 2.510 Mounted on standard board (four layer) (glass epoxy:50mmx50mmx0.8mm Heatsink mounted Rth(j-a)=49.8 C/W ...100 125 150 Ambient temperature Ta ( C) ...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:15-5 RoHS Compliant: No Optical Disc Motor Drive IC(Achieving a 1-chip motor drive)
File Size	93.51K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BFLL APT5018SFLL
OCR Text	...15V MIN TYP MAX UNIT pF 2520 510 36 63 9 27 13 9 7 35 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Miller ") Charge Turn-off Delay Time Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS I...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.84K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5020BVFR
OCR Text	...1.8 MIN TYP MAX UNIT pF 3700 510 200 150 25 70 12 10 50 8 4440 715 300 225 37 105 25 20 75 15 ns nC Gate-Source Charge Gate-Drain ...100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON...
Description	POWER MOS V 500V 26A 0.200 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.42K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT5020SVFR APT5020
OCR Text	...1.8 MIN TYP MAX UNIT pF 3700 510 200 150 25 70 12 10 50 8 4440 715 300 225 37 105 25 20 75 15 ns nC Gate-Source Charge Gate-Drain ...100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON...
Description	24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 500V 26A 0.200 Ohm
File Size	64.36K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	... 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Ti...100 1.3 5 Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C (Body Diode) (VGS = 0V, IS = ...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	... 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Tim...100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 2...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8030 APT8030B2VFR
OCR Text	... 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Tim...100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 2...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 27A 0.300 Ohm
File Size	60.47K / 4 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXB1561Q-Y
OCR Text	...t pins. Terminate these pins in 510 at VEE. 9 SD -0.9V to -1.7V 9 VEED 10 11 VEEDB VCCDB -5V 0V Negative power suppl...100 dB s 2.5 100 2 CAP2/CAP3 pin capacitance 470pF, V (UP pin) - V (DOWN pin) = 10mV, D ...
Description	s3R-IC for Optical Fiber Cimmunication Receiver
File Size	559.80K / 23 Page	View it Online	Download Datasheet

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