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WINSEMI SEMICONDUCTOR
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| Part No. |
WFF13N50
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| OCR Text |
...ted by junction temperature 2.L=500uh IAS=13A,VDD=50V,RG=0,Starting TJ=25 3.ISD13A,di/dt300A/us,VDD<BVDSS,STARTING TJ=25 4.Pulse Test:Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature. This transistor is an e... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
621.28K /
7 Page |
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it Online |
Download Datasheet
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http://
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| Part No. |
FMH20N60S1
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| OCR Text |
...400v, v gs =10v/0v, r g =27?, l=500uh t d(on) t r t f t d(off) t [ns] 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 50 100 150 200 250 300 350 400 450 500 i as =6.6a i as =4a i as =2a e av [mj] starting t ch [c] maximum avalanche energy vs. starti... |
| Description |
N-Channel enhancement mode power MOSFET
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| File Size |
309.41K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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