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  45ns vsop ind tempflash Datasheet PDF File

For 45ns vsop ind tempflash Found Datasheets File :: 50+       Page :: | 1 | 2 | 3 | 4 | <5> |   

    K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F640811B K4F660811B K4F660811B-JC-50 K4F660811B-JC-60 K4F640811B-JC-45 K4F640811B-JC-50 K4F640811B-JC-60 K4F660811B-JC-45
Description 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns

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    A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604V-50L A42L2604V-45LU A42L2604V-50LU A42L2604SERIES

AMIC Technology
Part No. A42L2604S-45L A42L2604S-50L A42L2604V-45L A42L2604V-50L A42L2604V-45LU A42L2604V-50LU A42L2604SERIES
Description 45ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode
50ns; refresh recycle:2K; 4M x 4bit CMOS dynamic RAM with EDO page mode
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE

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    UN222X UNR2222 UNR2223 UNR2224 UNR2221

Panasonic Semiconductor
Panasonic Corporation
Part No. UN222X UNR2222 UNR2223 UNR2224 UNR2221
Description Silicon NPN epitaxial planar type
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V
Flash Memory IC; Access Time, Tacc:120ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-TSOP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.5V; Mounting
POT THUMBWHEEL 10K OHM LINEAR

File Size 141.04K  /  6 Page

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    G-LINK Technology
Part No. GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-40J4 GLT41216-40TC GLT41216-45J4 GLT41216-45TC
Description 30ns; 64K x 16 CMOS dynamic RAM with extended data output
35ns; 64K x 16 CMOS dynamic RAM with extended data output
40ns; 64K x 16 CMOS dynamic RAM with extended data output
45ns; 64K x 16 CMOS dynamic RAM with extended data output

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    Samsung Electronic
Part No. KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 KM416C1004CJ-L6 KM416C1204CJ-6 KM416C1204CJ-L6
Description 5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

File Size 1,552.00K  /  35 Page

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    K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E641612B-L K4E661612B K4E661612B-L K4E661612B-TC K4E641612B-TC K4E641612B K4E641612B-TL60 K4E661612B-TL60 K4E641612B-TL45 K4E661612B-TL45 K4E641612B-TL50 K4E661612B-TL50
Description 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

File Size 883.49K  /  36 Page

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    SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V4004BSL-5 KM416V4104BSL-45 KM416V4104BSL-5 KM416V4104BSL-6
Description 4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power

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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

File Size 842.61K  /  35 Page

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

File Size 842.92K  /  35 Page

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    Hitachi,Ltd.
Sanyo Denki Co., Ltd.
ZF Electronics, Corp.
Part No. AI3D5 AI3D9 AI3D7 AI3D8 AI3D6 AM2D8 AM2D55J FAM2D5 FAM2D12G FAM2D15J AI3D13G AI4D7 AI4D8 AI4D5 AI4D6 AI4D9 AM2D10 AM2D14G FAM2D75J FAI3D75J FAI4D75J AM3D75J AI4D9J AI3D9J AM2D9J AM3D9J FAM2D4 FAM2D6 FAM3D45J FAM3D55 FAM3D50J FAM3D45G AI4D60 FAM2D9 FAM3D8 FAM2D13 FAM2D14 FAM2D16 FAM3D6G FAM3D6J FAM2D9J AI4D6J AI4D16J FAI4D16J FAI4D6J FAM3D35J AM2D50G AM2D50J AM2D5G AM2D55G AM3D55G AI3D5G FAM3D55J AI3D55G FAM2D35J AI4D5G AI4D55G FAM3D15J FAM3D5J FAM2D9G FAM2D8G FAM2D8J FAM2D80G FAM2D80J AI3D40 AI3D40G AI4D45G AI3D45G AI4D40G AI3D40J AI3D45J AI4D40J FAI4D6G FAM2D60J FAI3D60G AM3D10J AI4D25J AI3D20G AM3D11J FAM3D35G
Description 8 MINI MAP,PB/HALO FREE,NIPDAU LF,1.8V(SERIAL EE)
8 ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 1; Comments: High-rugged type; V_CES (V): (max 1200)
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: standard; Internal
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: low VF; Internal
10MS, 8 EIAJ, ind TEMP, GREEN, 1.8V(SERIAL EE)
Stepping Motor Driver ICs; Function: Driver; Vopmax (Vm*): 34V (40V); Io (lpeak): 1.5A (1.8A); Excitation: 1/16 step; I/F: CLK input; Mixed Decay Mode: included; Package: HSOP36; RoHS Compatible: yes
250NS,32LCC,883C; LEV B FULLY COMPLIANT(EEPROM)
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; No Of Circuits: 2; Comments: High-rugged type; V_CES (V): (max 600)
Discrete IGBTs; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; No Of Circuits: New product; Comments: 2.9; V_CES (V): (max 400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min -0.6) (max -1.1); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 0.5) (max 1.2); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 1.1) (max 1.8); R DS
Dual/Quad Zero-Drift Operational Amplifiers; Package: SSOP; No of Pins: 16; Temperature Range: -40° to 125°C
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE)
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High current; Part
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: high breakdown
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low VF; Internal
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: High voltage SW; Part
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On (Ω): 5.2 (max 15); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 100)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, ind TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, ind TEMP, GREEN, 2.7V(SERIAL EE)
DIE/WAFER FORM(EEPROM)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.140 (max 0.180) 0.120 (max 0.145); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 500)
High-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward Current I_F Max (mA): (max 25)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On (Ω): 18 (max 45); Drain-Source Voltage (V): (max -20); Drain Current (mA): (max -100)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.8) (max 2); R DS On (Ω): 0.33 (max 0.44) 0.23 (max 0.3); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 2000)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 20 (max 40); Drain-Source Voltage (V): (max -20); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On (Ω): 0.6 (max 1); Drain-Source Voltage (V): (max 60); Drain Current (mA): (max 200)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 2.4 (max 4); Drain-Source Voltage (V): (max -30); Drain Current (mA): (max -200)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source Voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On (Ω): 1.3 (max 2); Drain-Source Voltage (V): (max -60); Drain Current (mA): (max -200)
10MS, 8 PDIP, ind TEMP, GREEN, 1.8V(SERIAL EE)
Logic IC 逻辑IC
Discrete IGBTs; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 2; Comments: Non isolation package; V_CES (V): (max 900) 逻辑IC
90NS, vsop, ind TEMP(EPROM) 逻辑IC
Dual -48V Supply and Fuse Monitor; Package: SO; No of Pins: 8; Temperature Range: 0&deg;C to 70&deg;C 逻辑IC
45ns, SOIC, ind TEMP(EPROM) 逻辑IC
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min 0.8) (max 1.5); R DS On (&#206;&#169;): 4 (max 7); Drain-Source Voltage (V): (max 30); Drain Current (mA): (max 100) 逻辑IC

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